In-plane anisotropy of the optical and electrical properties of ReS2 and ReSe2 layered crystals

Ho, Ching‐Hwa; Huang, Y. S.; Tiong, K. K.

doi:10.1016/s0925-8388(00)01332-3

Cited by 79 publications

(79 citation statements)

References 9 publications

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“…The crystals grown by the I 2 vapor transport technique are typically p-type, [148][149] while the use of Br 2 usually results in n-type materials. [90,119,151,153] Until now, studies on the synthesis of TMDs via CVD are still rare. Very recently, many groups have explored easier and more controlled fabrication methods that give higher yields of ReS 2 and ReSe 2 nanosheets.…”

Section: Cvdmentioning

confidence: 99%

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

et al. 2017

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With the continuous exploration of 2D transition metal dichalcogenides (TMDs), novel high‐performance devices based on the remarkable electronic and optoelectronic natures of 2D TMDs are increasingly emerging. As fresh blood of 2D TMD family, anisotropic MTe2 and ReX2 (M = Mo, W, and X = S, Se) have drawn increasing attention owing to their low‐symmetry structures and charming properties of mechanics, electronics, and optoelectronics, which are suitable for the applications of field‐effect transistors (FETs), photodetectors, thermoelectric and piezoelectric applications, especially catering to anisotropic devices. Herein, a comprehensive review is introduced, concentrating on their recent progresses and various applications in recent years. First, the crystalline structure and the origin of the strong anisotropy characterized by various techniques are discussed. Specifically, the preparation of these 2D materials is presented and various growth methods are summarized. Then, high‐performance applications of these anisotropic TMDs, including FETs, photodetectors, and thermoelectric and piezoelectric applications are discussed. Finally, the conclusion and outlook of these applications are proposed.

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Section: Cvdmentioning

confidence: 99%

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

et al. 2017

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“…1 The underlying one-dimensional arrangement of rhenium in ReSe 2 leads to highly anisotropic properties in the layer plane, as revealed by studies of optical transmission and reflection normal to the layer plane [20][21][22][23][24][25] and by electron transport in bulk materials. 26 Along with this symmetry-breaking by the metal atoms, and again in contrast to MoS 2 , the chalcogen atoms are not all equally displaced above and below the Re To investigate monolayer ReSe 2 and to provide characterization tools for future work, we have recorded Raman spectra of bulk, few-layer and monolayer ReSe 2 (there are no published Raman spectra of pure ReSe 2 in any form though Raman spectra of ReS 2 have been reported 18,28 and there is one report of the Raman scattering of Mo-doped ReSe 2 29 ). Raman spectroscopy has proven to be invaluable in the characterization of graphene and related 2D materials [30][31][32] where it can give insight into, for example, layer number 33 and strain.…”

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confidence: 99%

Raman Spectra of Monolayer, Few-Layer, and Bulk ReSe₂: An Anisotropic Layered Semiconductor

et al. 2014

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Rhenium diselenide (ReSe2) is a layered indirect gap semiconductor for which micromechanical cleavage can produce monolayers consisting of a plane of rhenium atoms with selenium atoms above and below. ReSe2 is unusual among the transition-metal dichalcogenides in having a low symmetry; it is triclinic, with four formula units per unit cell, and has the bulk space group P1̅. Experimental studies of Raman scattering in monolayer, few-layer, and bulk ReSe2 show a rich spectrum consisting of up to 16 of the 18 expected lines with good signal strength, pronounced in-plane anisotropy of the intensities, and no evidence of degradation of the sample during typical measurements. No changes in the frequencies of the Raman bands with layer thickness down to one monolayer are observed, but significant changes in relative intensity of the bands allow the determination of crystal orientation and of monolayer regions. Supporting theory includes calculations of the electronic band structure and Brillouin zone center phonon modes of bulk and monolayer ReSe2 as well as the Raman tensors determining the scattering intensity of each mode. It is found that, as for other transition-metal dichalcogenides, Raman scattering provides a powerful diagnostic tool for studying layer thickness and also layer orientation in few-layer ReSe2.

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“…They belong to the transition metal dichalcogenide (TMD) family reported by Wilson and Yoffe 1 but, unlike more wellknown TMDs, their structure is highly anisotropic in the layer plane and this is reflected in all their physical properties. [2][3][4] The class of van der Waals layered semiconductors with in-plane anisotropy is a topic of great current interest and, besides ReS 2 and ReSe 2 , it includes black phosphorus, [5][6][7] GeS, 8 transition metal trichalcogenides 9 and Sb 2 Se 3 . 10 Proposed applications of ReX 2 (X = S, Se) include plasmonic materials, 11 polarization-sensitive photodetectors with high sensitivity, [12][13][14][15] inverters, 16 catalytic devices, 17,18 and few-layer field effect 19,20 or heterojunction 21 transistor structures.…”

Section: Introductionmentioning

confidence: 99%

Identifying light impurities in transition metal dichalcogenides: the local vibrational modes of S and O in ReSe2 and MoSe2

et al. 2017

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The transition metal dichalcogenides provide a rich field for the study of two-dimensional materials, with metals, semiconductors, superconductors and charge density wave materials being known. Members of this family are typically hexagonal, but those based on rhenium (ReSe 2 and ReS 2 ) and their ternary alloys are attracting attention due to their triclinic structure and their resulting, strong in-plane anisotropy. Here, Raman spectra of dilute ReSe 2 -x S x alloys containing low levels of sulfur (x ≤ 0.25) were obtained in order to investigate the distribution of substitutional sulfur atoms over the non-equivalent chalcogen sites of the ReSe 2 unit cell. Four different Raman bands arising from the local vibrational modes of sulfur atoms were observed, corresponding to these four sites. One local vibrational mode has a substantially in-plane displacement of the sulfur atom, two are partially out-of-plane and one is completely out-of-plane. The interpretation of the experimental data is based on calculations of the lattice dynamics and nonresonant Raman tensors of a model alloy via density functional theory. For comparison, polarization-dependent Raman spectra of pure ReS 2 are also presented; a dramatic increase in the Raman cross-section is found for the out-of-plane modes when the excitation polarization is normal to the layers and the light propagates in the layer plane. A similar increase in cross-section is found experimentally for the local vibrational modes of sulfur in dilute ReSe 2 -x S x alloys and is predicted for dilute sulfur-containing alloys based on MoSe 2 . The analogous local vibrational modes of substitutional oxygen impurities in ReSe 2 were also investigated computationally.

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In-plane anisotropy of the optical and electrical properties of ReS2 and ReSe2 layered crystals

Cited by 79 publications

References 9 publications

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

Raman Spectra of Monolayer, Few-Layer, and Bulk ReSe₂: An Anisotropic Layered Semiconductor

Identifying light impurities in transition metal dichalcogenides: the local vibrational modes of S and O in ReSe2 and MoSe2

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In-plane anisotropy of the optical and electrical properties of ReS2 and ReSe2 layered crystals

Cited by 79 publications

References 9 publications

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

Raman Spectra of Monolayer, Few-Layer, and Bulk ReSe2: An Anisotropic Layered Semiconductor

Identifying light impurities in transition metal dichalcogenides: the local vibrational modes of S and O in ReSe2 and MoSe2

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Raman Spectra of Monolayer, Few-Layer, and Bulk ReSe₂: An Anisotropic Layered Semiconductor