In-plane anisotropy of the optical and electrical properties of layered ReS₂crystals

Abstract

In-plane anisotropic optical and electrical properties of layered ReS2 crystals are reported. The optical anisotropic effects for E || b polarization and E b polarization were studied through polarization-dependent piezoreflectance and optical absorption measurements. The resistivity perpendicular to the b-axis was shown to be several times larger than that along the b-axis.

Large‐Area Bilayer ReS2 Film/Multilayer ReS2 Flakes Synthesized by Chemical Vapor Deposition for High Performance Photodetectors

“…[6] Such a weak interlayer coupling renders ReS 2 many novel properties, for example, bulk form behaves electronically, optically, and vibrationally like its monolayer counterpart. [5,7,8] Especially, bulk ReS 2 is a direct bandgap semiconductor (E g = 1.5-1.6 eV) just like decoupled monolayer, [5,9] in contrast to the indirect-to-direct bandgap transition in other TMDs. [10] Moreover, the distorted T phase is supposed to induce anisotropic electronic, optical and mechanical properties in ReS 2 .…”

“…[10] Moreover, the distorted T phase is supposed to induce anisotropic electronic, optical and mechanical properties in ReS 2 . [1,8,11,12] Due to the direct bandgap and anisotropic crystal structure of ReS 2 , it therefore is expected to have a wide the growth respectively (for more details see the Experimental Section; Figure S1 in the Supporting Information). The preference of formation of large-area ReS 2 film on sapphire substrate might be attributed to the weak van der Waals interaction between them.…”

“…[13,14] Previous studies on ReS 2 are based on bulk material [7,8,15] and recently few layers or 2D ReS 2 has been fabricated by mechanical or chemical exfoliation methods whereas the uniformity and yield of sample are inconstant. [5,9,13] To explore fabrication method of easy control and higher yield, very recently, Ajayan and coworkers, [6] Xiu and co-workers, [16] and Liu and co-workers [17] almost simultaneously adopted chemical vapor deposition (CVD) method to synthesize ReS 2 , which was a big advance in the ReS 2 fabrication.…”

Characterization of As2(Se1−xSx)3 series glass system

“…This observation lends experimental evidence that the As 2 (Se 1−x S x ) 3 series compounds are direct band-gap material in which the transition peak in each TR spectrum is closely matched with the absorption edge of the transmittance spectrum. This phenomenon is different from many other indirect crystals where the absorption edge is located at lower-energy side while the direct excitonic transitions are presented at higher-energy positions [24,25]. The transition feature in the TR spectrum of As 2 (Se 1−x S x ) 3 also shows an energy blue-shift behavior with the increase of sul- Fig.…”

Dichroic optical and electrical properties of rhenium dichalcogenides layer compounds

“…The mechanism leads to displacement of the lattice atoms, which may alter the electronic states of the solids. The lattice-field interaction expected to be more pronounced for polarization parallel to the b-axis, which is along the direction of the largest conductivity [7]. The in-plane optical and electrical anisotropy of ReX 2 (X = S, Se) seem closely related to the layer crystal's b-axis and their angular dependencies of optical and electrical behaviors need to be further studied.…”