In‐Plane AlN‐based Actuator: Toward a New Generation of Piezoelectric MEMS

Abstract

A novel design that utilizes aluminum nitride (AlN) piezoelectric thin films deposited on vertical surfaces for lateral motion and sensing is a step toward emerging multi-axial microelectromechanical systems (MEMS). This work demonstrates the fabrication process and potential applications of an in-plane moving piezoactuator. The actuator is excited using the inverse piezoelectric effect of the AlN thin film grown on the vertical surfaces of a Si cantilever. Lateral motion of the actuator is enabled when a voltage is applied between the top and bottom electrodes of the device, which are highly doped Si and titanium nitride thin film. The motion of the actuator is captured using scanning electron microscope.

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“…The resistive load value of the OTMMA can be estimated by the equivalent circuit method. As shown in figure 2(a), the top etched shape ITO-PET (ITO etched onto PET film using sputtering technology) [48] layer can be equivalent to a series RLC circuit, the middle PVC dielectric layer can be equivalent to a lossless transmission line, the bottom 6 Ω/sq ITO-PET layer can be equivalent to a short circuit. The overall input impedance of the multifunction structure can be calculated, based on the transmission line theory [49] 1…”