2020
DOI: 10.1002/adma.202006109
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In Operando Modulation of Rectification in Molecular Tunneling Junctions Comprising Reconfigurable Molecular Self‐Assemblies

Abstract: Ever-evolving, modern computing hardware, from processors to memory storage, relies on electronic components of extremely small size and high energy efficiency. [1] Molecular tunneling junctions, in which the charge transport properties of molecules are exploited in devices, have considerable potential in this context because subtle changes at the atomic scale can translate into unique and useful effects at the device level. [2,3] By exploiting the chemical nature of molecular electronics, these effects are ex… Show more

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Cited by 26 publications
(22 citation statements)
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“…The relationship between the structure of SAM and charge transport across the SAM is the main part of our study. The NH 2 -SAM is sandwiched between a Au bottom electrode and a GaO x /EGaIn top electrode (Figure b). ,,,,,, To confirm the reliability of our measurement, we first measured the J – V curves of the aromatic SH SAM (TPT) junction as a control experiment. The distribution of log| J | was 0.91 ± 0.35 at +0.5 V (Figure S4), in line with the value reported in the literature …”
Section: Results and Discussionmentioning
confidence: 89%
“…The relationship between the structure of SAM and charge transport across the SAM is the main part of our study. The NH 2 -SAM is sandwiched between a Au bottom electrode and a GaO x /EGaIn top electrode (Figure b). ,,,,,, To confirm the reliability of our measurement, we first measured the J – V curves of the aromatic SH SAM (TPT) junction as a control experiment. The distribution of log| J | was 0.91 ± 0.35 at +0.5 V (Figure S4), in line with the value reported in the literature …”
Section: Results and Discussionmentioning
confidence: 89%
“…We placed the sample on the sample stage and connected the grounded Au surface to the negative port of the source meter (6430 Sub-Femtoamp Remote SourceMeter, Keithley). The eutectic gallium-indium (EGaIn, 75.5% Ga and 24.5% In) in a microinjector was used as the top electrode and connected to the port of the source meter, which is a common method to build a molecular junction. ,, The liquid metal forms a GaO x (average thickness of 0.7 nm) oxide layer when exposed to air. We used a syringe to squeeze out the EGaIn droplet and brought it in contact with a clean gold surface and then slowly moved the syringe upward to form a conical EGaIn tip, followed by gently making contact with the samples (contact area ∼ 300 μm 2 ). A bias voltage was applied to the EGaIn tip, the J – V curve was scanned from 0 → +1.5 → −1.5 → 0 V with a step size of 200 mV, and the delay time between each step of applying the bias voltage was 0.08 s. For each new tip, we formed three junctions in 3–4 positions on one sample.…”
Section: Methodsmentioning
confidence: 99%
“…Largearea molecular junctions comprising self-assembled monolayers (SAMs) could be used to study the reversible and reproducible conductance switching at ambient conditions. [22] We fabricated SAMs of E-PCIH as described in Supporting Information (Section:T he Fabrication of SAMs). And the characterizations of SAMs via atomic force microscopy (AFM), and angle-resolved X-ray photoelectron spectroscopy (ARXPS) are detailed in Supporting Information (Section:SAMs Characterization).…”
Section: Methodsmentioning
confidence: 99%