In Memory Energy Application for Resistive Random Access Memory

Abstract

must be considered. This branch of research involves the so-called Moore than More's devices. [1] Some attempts to ease consumption rely on on-chip integration of nanoscale energy sources, [2,3] while others, notably in memory computing (IMU), [4] offer a revisited architecture where computation is decentralized. Other research groups proposed the integration of energy sources in close proximity of the memory, [5,6] or completely integrated within the memory architecture. [7] In this work, we explore a radically different concept, which lies on "dualbehavior" devices, able to store either information or energy, depending on the applied bias. Such capability would be greatly beneficial, allowing localized and high bandwidth energy supply to the processing unit (the memory or a dedicated arithmetic logic unit, ALU). The samples considered in our study indeed resemble ionic batteries at the nanoscale, providing ground to our inquiry of using these devices as energy sources, other than memory cells. Their operation relies on faradaic processes; therefore, the resulting energy density is expected to well exceed that of electrostatic capacitors, possibly being comparable to supercapacitors'. [8] The diameter of the devices under study can range between 1 and 100 µm, resulting in much smaller than the diameter of state-of-the-art planar supercapacitors (≈mm 2 ), [2] making such architecture more scalable and granular than any other state-of-the-art integrated power source. Energy storage is achievable when the device is, under a memory point of view, storing a logic 0, and could be accumulated during low logic operation activity for later use, for example, during the most power-hungry phases. These devices would also offer the advantage of placing the battery cell in close proximity to the target, meaning reduced IR drop and voltage undershoot, which develop in a typical inductive-impedance power delivery network (PDN). [9] A broad range of applications could be envisioned, each demanding different energy requirements, with widespread specifications. The most suitable target field should be selected taking into account the output voltage, energy, and power delivered by such RRAM-based batteries. In this work, we provide an outlook on some possible implementations, with some quantified ranges in terms of energy and instantaneous power requirements. Figure 1 reports the three main eligible domains: energy to memory, [10] energy to logic, [11] and neuromorphic computing. [12][13][14][15] This work explores the innovative concept of a hybrid dual-behavior device, based on emerging nonvolatile memory technology, for both data retention and energy storage. RRAM (resistive random access memory) is considered a major candidate as next-generation memory, thanks to its promising performances in terms of scalability and CMOS process compatibility. Its working mechanisms, based on faradaic processes, motivate the study on the feasibility of operating RRAM also as energy storage element. To evaluate the energy capability, various el...

Exploring the Bifunctionality of YSZ Thin Films in MOS Structures: Bridging the Gap between RRAM and Super-Pseudocapacitor Technologies

“…In certain cases, the primary objective is to achieve immediate and reliable switching capabilities alongside a higher current flow. Conversely, in some scenarios, the principal goal is centered around minimizing power consumption . It is worth emphasizing that the reduction of power consumption typically holds paramount importance in the design and optimization of RS devices across a wide range of applications, such as neuronal networks.…”

“…This reaction raises the breakdown voltage making it possible to store energy electrostatically. Also, Trotti et al conducted a study where they demonstrated the capabilities of these structures in both applications and proposed an electrical arrangement to generate a synergy . To the best of our knowledge, no research has yet been reported analyzing the energy storage and RS properties on a single YSZ film device.…”

Investigating the Effects of Sulfur Treatment on Material Characteristics and Resistance Switching Device Applications with Supercritical Fluid Technique

“…[1][2][3][4][5][6][7][8] Apart from the metal-oxide materials, solid electrolytes based on sulfides or oxides are also considered one of the appropriate candidates for the RS layer due to their rather stable characteristics. [9][10][11][12] In addition, RS behaviors based on nanoscale materials and structures such as nanodot, nanowire, and nanofilm have also attracted increasing attention for their potentials in device fabrication processes. [13][14][15][16][17][18][19][20][21] Generally, there are three steps for RRAM operations, including forming, the reset process, and the set process.…”

An Artificial Olfactory System Based on a Memristor Can Simulate Organ Injury and Functions in Air Purification

“…Simulating human perception and memory has great significance for future research on artificial noses, humanoid robots, and the next-generation human–computer interactions. − The sense of smell is an important part of the human sensory nervous system. − However, previous studies on the olfactory system have mostly focused on the recognition and perception of gas, and research on the memory function of smell is lacking . A memristor is a new storage device with memory function. , On the one hand, because it can work in a high resistance state (HRS) and a low resistance state (LRS), it can better correspond to the “0” and “1” of digital logic. − On the other hand, it has the advantages of not losing stored information after power failure, low energy consumption, strong scalability, and strong integration ability. − Therefore, the application of memristors to artificial olfactory systems has great significance for the development of artificial intelligence and human–computer interaction systems.…”