In<inf>x</inf>Ga<inf>1&#x2212;x</inf>Sb MOSFET: Performance analysis by self consistent CV characterization and direct tunneling gate leakage current

Abstract

In this paper, Capacitance-Voltage (C-V) characteristics and direct tunneling (DT) gate leakage current of antimonide based surface channel MOSFET were investigated. Self-consistent method was applied by solving coupled Schrödinger-Poisson equation taking wave function penetration and strain effects into account. Experimental I-V and gate leakage characteristic for p-channel InxGa1-xSb MOSFETs are available in recent literature. However, a selfconsistent simulation of C-V characterization and direct tunneling gate leakage current is yet to be done for both nchannel and p-channel InxGa1-xSb surface channel MOSFETs. We studied the variation of C-V characteristics and gate leakage current with some important process parameters like oxide thickness, channel composition, channel thickness and temperature for n-channel MOSFET in this work. Device performance should improve as compressive strain increases in channel. Our simulation results validate this phenomenon as ballistic current increases and gate leakage current decreases with the increase in compressive strain. We also compared the device performance by replacing InxGa1-xSb with InxGa1-xAs in channel of the structure. Simulation results show that performance is much better with this replacement.I.

Optimization of insulated HfO₂ dielectrics of GaN/InN/GaN/ In_0.1Ga_0.9N enhancement mode of MIS-HEMT heterostructure for high frequency power amplifier applications

“…The RON of the device should be very low to reduce the power consumption in the device switching process. RON was found to decrease linearly as ns increases [30] and is given by…”