In-line, Non-destructive Electrical Metrology of Nitrided Silicon Dioxide and High-k Gate Dielectric Layers

Abstract

Highly sensitive, accurate and precise methods for measuring the properties of dielectrics used in sub 0.13 jam technology are required. It is particularly critical to monitor the electrical properties of the gate dielectric. The electrical properties of thin dielectrics are assessed with a new, non-contaminating, non-damaging elastic probe. This probe forms a small diameter (-30 um to 50 um) Elastic Metal gate (EM-gate) on the surface of a dielectric. Subsequent electrical measurements are made with advanced Capacitance-Voltage (CV), Conductance-Voltage (GV), and Current-Voltage (IV) techniques. Valuable and essential information about the dielectric thickness and quality, leakage current, Si-SiO 2 interface quality, and channel carrier density profile is obtained.