Abstract:High-K/metal gate technology, introduced by Intel, to replace the conventional oxide gate dielectric and polysilicon gate has truly revolutionized transistor technology more than any other change over the last 40 years. First introduced at the 45nm node, this complex process has now been adopted for advanced nodes. The capability of picosecond ultrasonic measurements (PULSE™) for in-line monitoring of High-K/metal gate structures was evaluated and the benefits of this technology for measuring various structure… Show more
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