In-gap states induced by distortion in α-bismuthene

Thickness dependent band structure of α-bismuthene grown on epitaxial graphene

“…Although the growth of Bi (111) on HOPG was also reported using low-temperature deposition [23], the deposition rate was ten times higher than that in this study. The α-Bi deposited at room temperature on graphene/6H-SiC substrate also exhibits a domain rotated at 90 • with respect to the mirror twin boundary [24]. The absence of the second (110) grain and the (111) domain in our samples can be attributed to the deposition rate and the substrate temperature.…”

Epitaxial growth of Bi(110) and Bi2Se3 thin films on a ferromagnetic insulator substrate of Cr2Ge2Te6

“…Two sets of islands with the three-fold rotational axes (red and blue bars) differed by ∼21 • can be resolved, where the commensurate alignment of the diagonal of the rectangular Bi(110) lattice to that of the √ 3 × √ 3 unit cell of the substrate, similar to the Bi islands grown on the Si(111) √ 3 × √ 3-B surface [32]. The Line profile analysis (figure 2(i)) discloses an island height of 1.0 ± 0.1 nm, akin to the distorted black-phosphorus (BP)like bilayer Bi(110) grown on graphite, bilayer graphene/SiC [33,34] and other substrates [30][31][32][35][36][37][38].…”

Edge states of α-bismuthene nanostructures

“…β-Bi structures have been thoroughly investigated [10][11][12][13][14][15][16][17][18], and it is found the nature of the ESs varies depending on the substrate on which it is grown. α-Bi structures were grown on several substrates (Si(111) [19], Ge(111) [20], the superconductor NbSe 2 [21], graphene supported by SiC [22][23][24][25], MoS 2 [26], TiSe 2 [27] and highly oriented pyrolytic graphite (HOPG) [3,28]), but less is known about their topological properties and ESs. Calculations suggest a strong dependence of the topology on the atomic buckling at the α-Bi surface i.e.…”