In flight observation of proton induced destructive single event phenomena

Self Cite

This paper presents particle flux measurements (protons and electrons) obtained with the ICARE-NG detector on the JASON-2 orbit (1336 km alt., 66 incl.) for the period June 2008-Aug. 2010. At this altitude, the South Atlantic Anomaly is greatly broadened as compared to lower altitudes. Proton flux measurements are made in the range 27.5-290 MeV and electron flux in the range 1.6-3.6 MeV. A great care was taken to assess the influence of the satellite on the particle measurements. Comparison of measurements with the results of the AP8 MIN model are given for protons, taken into account environment anisotropy.

Section: Design and Calibration Of The Detectormentioning

confidence: 99%

In Flight Measurements of Radiation Environment on Board the French Satellite JASON-2

Böscher¹,

Bourdarie²,

Falguère³

et al. 2011

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“…For SEL the SV dimensions are considered as 20 x 4 x 2 µm 3 according to laser studies of similar technologies [16]. Indeed, 2 µm is the standard SV thickness used in recent in-flight SEL rate studies [17], [18] however as will be later discussed should not be applied as a general reference value. For SEU, we assume an SV volume of 3 x 3 x 0.5 µm 3 according to the cell size of the considered SRAM and the associated estimated charge collection depth.…”

Section: Volume-equivalent Let Approach -Velamentioning

confidence: 99%

Simplified SEE Sensitivity Screening for COTS Components in Space

Alía

Brügger

Daly

et al. 2017

We introduce an approach aimed at pre-screening COTS components according to their SEE sensitivity for space missions in which a complete characterization of their individual response to protons and heavy ions is not feasible due to cost and time constraints. The method is applied to a set of SRAM memories for SEU and SEL and the resulting expected SEE rates are compared with traditional approaches and in-flight data for a LEO polar and geostationary orbit. Despite the limitations related to components with high-LET threshold and thick sensitive volumes, we conclude that the proposed method can be an efficient means of rejecting highly sensitive components or lots and performing the complete characterization only on passing devices.

“…The SEL RPP depth of a deep submicron SRAM is estimated to be m using TPA laser testing [13]. In the recent latchup rate calculations, the SV thickness of deep submicron SRAMs is set to m [4], [6] or m [5], [7]- [9], [11]. In this paper, the main point is to investigate the influence of SV number on SEL rate and so the SV thickness is assumed to be the classical value of m.…”

Section: Sel Rate Predictionsmentioning

confidence: 99%

“…As for memory device, there are two empirical practices to deal with the SEL SV number: one assumes that there is only one SV in the whole device [4]- [6], another assumes that there are as much SEL SVs as the number of memory cells [7]- [9]. The number of SV, which has not been clearly stated in some SEL rate predictions [10]- [13], should be one of the two assumptions.…”

Section: Introductionmentioning

confidence: 99%

“…The number of SV, which has not been clearly stated in some SEL rate predictions [10]- [13], should be one of the two assumptions. The number of SV could be of great influences on the rate prediction and some studies discussed the problem qualitatively [6], [14], [15]. But it is still not clearly known about how to obtain the exact SEL SV number of the device till now, and the difference between rate predictions using the assumed and exact SV number is not investigated.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Correction of Single Event Latchup Rate Prediction Using Pulsed Laser Mapping Test

Han

Feng

et al. 2015

Most classical approaches of single event effect rate prediction are based on the rectangular parallelepiped model of sensitive volume. However it is not clear about the number of sensitive volume in the device when predicting the in-flight single event latchup rate. As for memory device, there are two empirical practices to deal with the latchup sensitive volume number: one assumes that there is only one sensitive volume in the whole device; another assumes that there are as much sensitive volumes as the number of memory cells. The latchup sensitive volume number of a 4M-bits SRAM is determined as 63360 using pulsed laser mapping test in this work first. Based on the two assumed and measured sensitive volume number, the single event latchup rates of the device are calculated and compared. The results show that pulsed laser could be a powerful tool to obtain the real sensitive volume number in the device, which is significant for single event latchup rate prediction. The latchup rate will be either overestimated or underestimated with the assumption of the sensitive volume number as one or as much as the number of memory cells.Index Terms-In-flight rate, pulsed laser, sensitivity mapping, single event latchup (SEL), SRAM.