2007
DOI: 10.1103/physrevlett.98.196804
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In-Crystal and Surface Charge Transport of Electric-Field-Induced Carriers in Organic Single-Crystal Semiconductors

Abstract: Gate-voltage dependence of carrier mobility is measured in high-performance field-effect transistors of rubrene single crystals by simultaneous detection of the longitudinal conductivity sigma(square) and Hall coefficient R(H). The Hall mobility mu(H) (identical with sigma(square)R(H)) reaches nearly 10 cm(2)/V s when relatively low-density carriers (<10(11) cm(-2)) distribute into the crystal. mu(H) rapidly decreases with higher-density carriers as they are essentially confined to the surface and are subjecte… Show more

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Cited by 169 publications
(113 citation statements)
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“…Electrostatic gating in the field-effect transistor geometry is ideal for such studies, as it enables wide-range tuning of the carrier density in a single sample 16 . A clear crossover to band transport has indeed been detected in such devices, via observation of a phonon-limited temperature dependence of the mobility, a robust Hall effect, and equivalence of the Hall mobility and the mobility extracted from gate voltagedependent measurements 14,15 . Semiconducting polymers, perhaps unsurprisingly given their lower crystallinity, low bandwidth and greater disorder, lag somewhat behind.…”
mentioning
confidence: 91%
“…Electrostatic gating in the field-effect transistor geometry is ideal for such studies, as it enables wide-range tuning of the carrier density in a single sample 16 . A clear crossover to band transport has indeed been detected in such devices, via observation of a phonon-limited temperature dependence of the mobility, a robust Hall effect, and equivalence of the Hall mobility and the mobility extracted from gate voltagedependent measurements 14,15 . Semiconducting polymers, perhaps unsurprisingly given their lower crystallinity, low bandwidth and greater disorder, lag somewhat behind.…”
mentioning
confidence: 91%
“…First, FETs were fabricated either by laminating the crystal onto prefabricated doped silicon with a silicon dioxide dielectric or by evaporating dielectric parylene films on top of the crystals. [11][12][13] Second, a layer of electrically insulating, electron donating TTF ͑600 nm thick͒ was evaporated on top of the crystal. In this case gold contacts were used to prevent re-evaporation of the TTF-TCNQ.…”
mentioning
confidence: 99%
“…Therefore, the wavefunction must be coherent over several molecules. [3][4][5] For these reasons, the experimental observation of the Hall effect in the hopping systems of localized charge carriers significantly differs from that of band-transport systems. More precisely, the inverse Hall coefficient 1/R H equals the charge density Q only if the charge carriers are coherent.…”
Section: Introductionmentioning
confidence: 99%
“…According to definition, αo1 represents the situation where the electronic system cannot be described by fully coherent wavefunctions, while α = 1 represents systems with fully coherent charge transport as is observed in high-mobility organic semiconductors, such as rubrene, DNTT, alkyl-DNTT and pentacene derivatives. [4][5][12][13][14] We note that the effect of inelastic scattering is minor in organic semiconductors, so that α41 is unlikely.…”
Section: Emergence Of Coherence In Soft Semiconductorsmentioning
confidence: 99%
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