In-circuit Shoot-through-based Characterization of SiC MOSFET TSEP Curves for Junction Temperature Estimation

In-place Characterization of On-state Voltage for SiC MOSFETs: Controlled Shoot-through vs. Film Heater

“…Namely, we have explored two procedures that can be used in-place (or in-circuit), with the power device mounted in its circuit. The CST-based procedure, already presented in [8], has been carefully compared with state-of-the-art thermal chamber curves, paying special attention to the duration of the current pulse used for the measurement and to the artifacts connected to the limited bandwidth of the clamping circuit.…”

“…In this work the traditional R ds,on -T j calibration on a per-device basis in a thermal chamber is compared with two in-place, or in-circuit, techniques. The first one has already been introduced in [8] and is based on the controlled shoot-through technique (CST). The second, entirely novel procedure uses a resistor embedded between two Kapton R (polyimide) films, working both as heating medium and temperature sensor.…”

In-Place Characterization of On-State Voltage for SiC MOSFETs: Controlled Shoot-Through vs. Film Heater

“…In this work, the experimental tests are performed on the device C2M0080120D, which is a SiC MOSFET and exhibits the largest i d /i d,sat among those considered, thereby representing the worst-case for the dependence of R ds,on on the drain current. In [8], the results of CST applied to the silicon MOSFET STW77N65M5 are presented, along with a comparison with C2M0080120D, showing that the two types of device behave similarly for what concerns this aspect.…”

“…Equation ( 5) also highlights the two components affecting the dependence of on-state resistance on the junction temperature. In fact, the gain β contains the electron mobility µ n , which decreases with temperature, while the threshold voltage V T decreases as well, according to the following empirical rules [8]:…”

“…In this work, the traditional R ds,on vs. T j calibration on a per-device basis in a thermal chamber is compared with two in-place, or in-circuit, techniques. The first one was already introduced in [8] and is based on the controlled shoot-through technique (CST). The second entirely novel procedure uses a resistor embedded between two Kapton ® (polyimide) films, working both as a heating medium and temperature sensor.…”