1993
DOI: 10.1080/10420159308219748
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In beam Mößbauer spectroscopy: 57Fe in semiconductors

Abstract: An overview of results on microscopic properties, implantation features and dynamics of Fe ions implanted into Si, Ge and ZnS as investigated with in beam MoObauer spectroscopy(1BMS) is given. Potential and limitations of the method are discussed.

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