In Al1–N/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameter

InAlN-based LEDs emitting in the near-UV region

“…In the last few years, with the aim of extending the use of InAlN alloys also to light emitting applications, our group has extensively investigated the growth of InAlN materials in the range 0%-25% of InN content. [5][6][7][8] PL experiments performed on our samples show broad peaks with full width at half maxima (FWHM) in excess of 200 meV, and "apparent" internal quantum efficiencies (i.e. low-temperature to room-temperature intensity ratios) up to 40%.…”

A novel quantum well RTD with intensive and continuous current oscillation in the bias voltage range higher than 3.15 V

“…As for the quantum devices for pure electron applications, dimensions of quantum well and barrier layers are much thinner than those of quantum devices for optical applications [1][2][3][4][5][6], which leads to much more significant quantum size effect since the dimensions of quantum well and barrier layers are much more closer to their de Broglie wavelengthes respectively on one hand and inner band carrier transportation mechanism dominants when sub-band energy level split occurs on the other hand.…”

A GaN/InGaN/AlGaN MQW RTD for versatile MVL applications with improved logic stability

“…Accompanying the development of III-nitrides materials and devices, increasing attention has been paid to the GaNbased resonate tunneling diode (RTD) because of its excellent properties such as wider direct band gap, larger band offset, higher peak electron velocity, higher critical breakdown voltage and higher thermal stability than those of GaAs/Al-GaAs and Si/GeSi counterparts [1][2][3][4][5][6][7][8][9][10] . In particular, conduction band offsets in the InGaN/AlGaN system are larger than those in the InGaAs/AlGaAs system and a built-in electric field exists owing to the piezoelectric polarization effects, the former appeared to have very interesting negative differential resistance (NDR) related properties and became considerably attractive during the last decade [1, 3-5, 7, 8, 10] .…”

“…In particular, conduction band offsets in the InGaN/AlGaN system are larger than those in the InGaAs/AlGaAs system and a built-in electric field exists owing to the piezoelectric polarization effects, the former appeared to have very interesting negative differential resistance (NDR) related properties and became considerably attractive during the last decade [1, 3-5, 7, 8, 10] . RTD is one of the key candidates for enhancing the performance of multi-state memories (MSM) and multi-valued logic (MVL) circuits, generating THz signals, detecting THz signals, tuning RF systems and so on with reduced circuit complexity [3,[5][6][7][8][9][10] .…”

“…Zhang et al proposed a method to restrain polarization effects in GaN/AlGaN RTD by regulating the included angle 'α' between the normal vector of the original top surface on GaN substrate and c direction. The proposed method suggests that the TNRW varies with 'α' from about 0.11 to about 0.55 V as the original top surface on GaN substrate varies from to a plane [10] . Most of the above mentioned RTDs are not characteristic of obvi-ous hysteresis in the NDR region of current-voltage curves, which means a too small noise margin for MVL applications and is harmful to the logic stability of MSM and MVL circuits.…”