Impurity states and indirect exchange interaction in irradiated graphene

Modi, Ke,; Tse, Wang-Kong

doi:10.1103/physrevb.106.075424

Phys. Rev. B

2022

DOI: 10.1103/physrevb.106.075424

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Impurity states and indirect exchange interaction in irradiated graphene

Ke, Modi

Wang-Kong Tse

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2022

2024

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Cited by 3 publications

(1 citation statement)

References 38 publications

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“…In recent years, a light field has been considered to introduce to 2D materials, such as graphene, − silicene, borophene, − phosphorene, WSe 2 , , and MoS 2 , aiming at its nontrivial role in modulating the band structures. Huang et al studied photoinduced KT in semi-Dirac materials .…”

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confidence: 99%

Super-Klein Tunneling in a Black-Phosphorus-Based N–P Junction Modulated by Linearly Polarized Light

Chen,

Kong,

Zhang

et al. 2024

J. Phys. Chem. Lett.

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We investigate the role of the black-phosphorus-based n-p (BP-np) junction modulated by linearly polarized light (LPL) in governing the quantum transport behaviors. Following the analysis of the band structures, we find that the LPL can adjust the gap between the conduction and valence bands by reducing the impact of momentum mismatch caused by the band gap. In addition, LPL can also eliminate the angle dependence of transmission. This means that for BP with a fixed band gap, the transmission-forbidden region can be reduced and the transmission probability can be increased by applying LPL modulation of the band gap to achieve all-angle perfect transmission, i.e., super-Klein tunneling (SKT). Our investigation also found that the SKT is robust to different incident energies, resulting in a larger conductance platform. These findings could be useful for the development and application of optical-like electronic devices.

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confidence: 99%

Super-Klein Tunneling in a Black-Phosphorus-Based N–P Junction Modulated by Linearly Polarized Light

Chen,

Kong,

Zhang

et al. 2024

J. Phys. Chem. Lett.

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Floquet engineering of tilted and gapped Dirac bandstructure in 1T$$^\prime$$-MoS$$_2$$

Iurov

Zhemchuzhna

Gumbs

et al. 2022

Sci Rep

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We have developed a rigorous theoretical formalism for Floquet engineering, investigating, and subsequently tailoring most crucial electronic properties of 1T$$^\prime$$ ′ -MoS$$_2$$ 2 by applying an external high-frequency dressing field within the off-resonance regime. It was recently demonstrated that monolayer semiconducting 1T$$^\prime$$ ′ -MoS$$_2$$ 2 exhibits tunable and gapped spin- and valley-polarized tilted Dirac bands. The electron-photon dressed states depend strongly on the polarization of the applied irradiation and reflect a full complexity of the low-energy Hamiltonian for non-irradiated material. We have calculated and analyzed the properties of the electron dressed states corresponding to linear and circular polarization of a dressing field by focusing on their symmetry, anisotropy, tilting, direct and indirect band gaps. Circularly polarized dressing field is known for transition into a new electronic state with broken time-reversal symmetry and a non-zero Chern number, and therefore, the combination of these topologically non-trivial phases and transitions between them could reveal some truly unique and previously unknown phenomena and applications. We have also computed and discussed the density of states for various types of 1T$$^\prime$$ ′ -MoS$$_2$$ 2 materials and its modification in the presence of a dressing field.

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Noncollinear twisted RKKY interaction on the optically driven SnTe(001) surface

2023

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Impurity states and indirect exchange interaction in irradiated graphene

Cited by 3 publications

References 38 publications

Super-Klein Tunneling in a Black-Phosphorus-Based N–P Junction Modulated by Linearly Polarized Light

Super-Klein Tunneling in a Black-Phosphorus-Based N–P Junction Modulated by Linearly Polarized Light

Floquet engineering of tilted and gapped Dirac bandstructure in 1T$$^\prime$$-MoS$$_2$$

Noncollinear twisted RKKY interaction on the optically driven SnTe(001) surface

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