Impurity segregation in CdxHg1-xTe crystals grown using ACRT

Control of growth interface shape using vibroconvective stirring applied to vertical Bridgman growth

“…The influence of CVS on interface shape during growth was attributed to the ability of the generated flows to remove latent heat released at the growth interface combined with the ability of CVS flows to bring hotter fluid from the melt surface to the colder growth interface. Now, that a reliable method for controlling CVS fluid flow during growth in order to control the shape of the crystal-melt interface has been demonstrated, the CVS method has potential to be used for the same types of crystal growth enhancement over unstirred Bridgman melts that stirring techniques like ACRT have been shown to produce in growth systems such as Hg (1Àx) Cd x Te [17][18][19][20][21]. Because CVS requires the adjustment of only two parameters, the time to optimize its application to a new growth system should be shorter than that of a more widely used stirring technique like ACRT, which requires the adjustment of many parameters.…”

“…ACRT has been the most widely studied of these techniques. A large portion of the work on ACRT was performed by Capper and co-workers [17][18][19][20][21] in order to improve the growth of Hg (1Àx) Cd x Te and CdTe/CdZnTe. The appropriate application of ACRT was shown to produce improved compositional uniformity, larger singlecrystal regions, and lower second phase precipitate levels [17].…”

“…Several different techniques for melt stirring have been applied to vertical Bridgman growth systems including: the accelerated crucible rotation technique (ACRT) [16][17][18][19][20][21][22], rotating submerged baffles [23,24], axial vibrational control (AVC) [25,26], and coupled vibrational stirring (CVS) [27][28][29][30][31]. ACRT has been the most widely studied of these techniques.…”

Vertical Bridgman Growth of Binary Compound Semiconductors

“…In the 1080s and 1990s, the applicability of ACRT to the VB growth of II-VI compounds (CdHgTe, CdTe, Cd 1-x Zn x Te) was thoroughly investigated in a series of experimental studies by Capper et al [118][119][120][121][122][123][124]. In the 1080s and 1990s, the applicability of ACRT to the VB growth of II-VI compounds (CdHgTe, CdTe, Cd 1-x Zn x Te) was thoroughly investigated in a series of experimental studies by Capper et al [118][119][120][121][122][123][124].…”

Low-energy methods of mass transfer control at crystal growth

“…Active methods of mass transfer control in liquid phase are widely used in practice, for instance, rotation of the crystal or/and the crucible, the encapsulated growth, application of strong static magnetic fields and so on. The material grown by these methods is more homogeneous both in axial and in radial direction [1,2]. The other way of melt flow control is the application of low-energy weak external effects (electromagnetic, acoustic, mechanical, etc.…”