Impurity Scattering in Dilute Silver Alloys

Abstract

The temperature dependence of electrical conductivity of rf-sputtered amorphous Ge, Si, and Ge-Si films as functions of annealing temperature and time have been investigated for 350^ T^ 77 K. Annealing shifts the hopping region to lower temperatures. We find that reasonable values of Mott's parameters are obtained only for properly annealed specimens in the true hopping-conduction region.