1982
DOI: 10.1063/1.93633
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Impurity redistribution in GaAs metalorganic vapor phase epilayers

Abstract: This letter reports new experimental results using the secondary ion mass spectrometry technique for quantitative determination of Mg, Cr, Mn, Fe in gallium arsenide layers grown on semi-insulating substrates by means of metalorganic vapor phase epitaxy. Mg amd Fe accumulation at the interface and variable residual impurity levels were found in these layers.

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Cited by 9 publications
(1 citation statement)
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“…SIMS profiles which show the accumulation of Sn at the growing film surface during the deposition of Sn-doped GaAs by MBE have been compared to segregation model calculations (754). SIMS has also been applied to the determination of Mg, Cr, Mn, and Fe distributions in GaAs epilayers (415,416). A SIMS study of Mn incorporation into MBE GaAs has shown that the Mn competetively surface segregates, desorbes, and complexes with As at the surface, without any significant diffusion (237).…”
Section: Semiconductorsmentioning
confidence: 99%
“…SIMS profiles which show the accumulation of Sn at the growing film surface during the deposition of Sn-doped GaAs by MBE have been compared to segregation model calculations (754). SIMS has also been applied to the determination of Mg, Cr, Mn, and Fe distributions in GaAs epilayers (415,416). A SIMS study of Mn incorporation into MBE GaAs has shown that the Mn competetively surface segregates, desorbes, and complexes with As at the surface, without any significant diffusion (237).…”
Section: Semiconductorsmentioning
confidence: 99%