Impurity Reaction with Dislocations in Semiconductors

Sumino, Kôji

doi:10.1002/(sici)1521-396x(199901)171:1<111::aid-pssa111>3.0.co;2-t

Cited by 36 publications

(6 citation statements)

References 20 publications

(25 reference statements)

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“…Therefore the crystallographic structure of the defect itself has a significant influence on the EBIC contrast. 24 The increase in the EBIC current for screw dislocations (defect A in Fig. 1) is attributed to depleted zones of impurities around the dislocations, which are formed due to "the gettering effect" during high-temperature diffusion ͑1800-2100°C͒.…”

Section: Resultsmentioning

confidence: 99%

Observation of dislocations in diffused 4H–SiC p-i-n diodes by electron-beam induced current

Maximenko

Soloviev

Cherednichenko

et al. 2004

Journal of Applied Physics

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The electron-beam induced current (EBIC) method was employed to investigate the electrical activity of dislocations in silicon-carbide-diffused p-n diodes. It was observed that EBIC contrast depends on the type of defect (superscrew, screw, and edge dislocation). This dependence was attributed to spatial inhomogeneities in the electrical properties of the material around the dislocations due to different impurity-dislocation interactions during high-temperature (∼1900°C) diffusion. Chemical etching of the sample was used to define the nature of the defects observed by EBIC imaging. It was found that electrical breakdown of the diodes occurs at the location of superscrew dislocations.

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Section: Resultsmentioning

confidence: 99%

Observation of dislocations in diffused 4H–SiC p-i-n diodes by electron-beam induced current

Maximenko

Soloviev

Cherednichenko

et al. 2004

Journal of Applied Physics

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“…However, we cannot discount solitons as a catalyst for dislocation motion, as they can offer more robust explanations of recombination enhanced glide 43,44 and impurity pinning. 45 Additionally it may be possible to create singular solitons with a change of boundary conditions, ͑ours currently are periodic͒ or at some defect intersecting the dislocation line. Both of these may obviate the need to form solitons in pairs and hence potentially halve the activation energy for formation.…”

Section: B Solitonsmentioning

confidence: 99%

Linewise kinetic Monte Carlo study of silicon dislocation dynamics

et al. 2004

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We present a number of n-fold way kinetic Monte Carlo simulations of the glide motion of 90°partial dislocations in silicon. We undertake a survey of ratios of kink formation energy F k to kink migration barrier W m , over a range of temperatures and applied stresses. These simulations are compared with Hirth-Lothe theory and an extension to the Hirth-Lothe theory of Kawata and Ishiota. The latter is found to give the best description of the system. Using literature first principle values for the kink and soliton formation and migration energies, a model combining both strained bond and soliton mediated motion shows a negligible contribution to dislocation motion from the solitons. The high soliton pair creation barrier was limiting and a soliton mediated mechanism for dislocation motion would have to achieve thermal equilibrium concentration via impurity or point defect interaction to be effective. We also show that if this can be overcome solitons greatly increase the mobility of the dislocation, even without a binding energy between solitons and kinks. The simulation coded here is easily expandable to incorporate further dislocation line effects such as impurities at the line.

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“…But it is also known, that strain fields close to the dislocation core assist impurity incorporation close to it. 26 Such a preferred incorporation does also presume a sufficiently high Si surface diffusion. When comparing bonding of surface atoms for c-and aplane GaN, Si on a c-plane Ga terminated surface is in competition with Ga atoms or a Ga adlayer at typical MOVPE growth conditions, which is most likely promoting surface diffusion.…”

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confidence: 99%

Ge as a surfactant in metal-organic vapor phase epitaxy growth of a-plane GaN exceeding carrier concentrations of 1020 cm−3

Wieneke¹,

Witte²,

Lange³

et al. 2013

Applied Physics Letters

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Nonpolar n-type doped a-plane GaN films were grown by metal-organic vapor phase epitaxy on r-plane sapphire substrates using silane and isobutylgermane as Si and Ge dopants, respectively. It is found that Ge-doping acts as a surfactant enabling the growth of fully coalesced and mirror-like a-plane GaN films with electron concentrations above 1020 cm−3. Si-doping in excess of 2×1019 cm−3 shows an antisurfactant behavior leading to surface degradation. No significant impact on strain was found for any dopant. Results on the ordinary and extraordinary dielectric functions as determined by ellipsometry prove the high optical quality of the Ge-doped films.

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Impurity Reaction with Dislocations in Semiconductors

Cited by 36 publications

References 20 publications

Observation of dislocations in diffused 4H–SiC p-i-n diodes by electron-beam induced current

Observation of dislocations in diffused 4H–SiC p-i-n diodes by electron-beam induced current

Linewise kinetic Monte Carlo study of silicon dislocation dynamics

Ge as a surfactant in metal-organic vapor phase epitaxy growth of a-plane GaN exceeding carrier concentrations of 1020 cm−3

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