Impurity-peak formation during proton-enhanced diffusion of phosphorus and boron in silicon

Akutagawa, W.; Dunlap, H. L.; Hart, R. R.; Marsh, O. J.

doi:10.1063/1.326044

Cited by 38 publications

(23 citation statements)

References 26 publications

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“…To satisfy the experimental data [11], the average migration length of point defects l × i was chosen to be equal to 0.34 µm. This value is very close to the value of l × i = 0.32 µm, which has been derived from the experimental data of [16] on the boron radiation-enhanced diffusion during implantation of high energy hydrogen ions.…”

Section: Modeling Of the Radiation-enhanced Diffusionsupporting

confidence: 88%

“…This value is greater than the value l × i = 0.2 µm, which was used in [37]. [16]; dotted curve represents the concentration of nonequilibrium point defects in the neutral charge state normalized to the thermally equilibrium one. It is supposed that boron diffusion occurs due to the simple vacancy mechanism It can be seen from Fig.…”

Section: Modeling Of the Radiation-enhanced Diffusionmentioning

confidence: 89%

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Microscopic mechanism responsible for radiation-enhanced diffusion of impurity atoms

Velichko

2016

Philosophical Magazine

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Modeling of radiation-enhanced diffusion of boron and phosphorus atoms during irradiation of silicon substrates respectively with high-and low-energy protons was carried out. The results obtained confirm the previously arrived conclusion that impurity diffusion occurs by means of the "impurity atom -intrinsic point defect" pairs and that the condition of the local thermodynamic equilibrium between substitutional impurity atoms, nonequilibrium point defects created by irradiation, and the pairs is valid. It is shown that using radiation-enhanced diffusion, one can form a special impurity distribution in the semiconductor substrate including retrograde profiles with increasing impurity concentration into the bulk of a semiconductor. The calculations performed give clear evidence in favor of further investigation of various doping processes based on radiation-enhanced diffusion, especially the processes of plasma doping, to develop a cheap method for formation of specific impurity distributions in the near surface region.

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Section: Modeling Of the Radiation-enhanced Diffusionsupporting

confidence: 88%

Section: Modeling Of the Radiation-enhanced Diffusionmentioning

confidence: 89%

Microscopic mechanism responsible for radiation-enhanced diffusion of impurity atoms

Velichko

2016

Philosophical Magazine

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“…[25] is generalized to .li + Jz+ Jv+ Ji= u(t) t2 [27] Vacancy winds and/or interstitialcy winds may occur in substrates subjected to bombardments by energetic particles, including ion implantations. The observed uphill diffusion of boron and phosphorus due to proton irradiation of silicon (85,86) cannot be explained in terms of radiation enhanced diffusion (87,88). Flux interactions have to be invoked.…”

Section: Pumping Of Point Defects By Diffusionmentioning

confidence: 98%

Vacancies and Self‐Interstitials in Silicon: Generation and Interaction in Diffusion

1992

J. Electrochem. Soc.

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Overwhelming evidence has been accumulated since 1974 that diffusion in silicon takes place via a dual vacancy‐interstitialcy mechanism. Most of the ensuing discoveries of new phenomena and the further sophistication of the dual vacancy‐interstitialcy diffusion model are related to nonequilibrium point defects. Many sources of excess silicon interstitials and excess vacancies have been discovered; but the mechanisms of defect generation, particularly by surface sources, have remained unresolved issues. We discuss in some detail two areas that are very important in diffusion modeling, but have not been well understood; the relationship between the concentrations of vacancies and interstitials under nonequilibrium conditions, and the chemical pump and the vacancy wind phenomena. We also discuss the interactions between point defects and oxygen precipitation and their implications.

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“…( 5) and ( 6) that investigation of impurity redistribution under conditions of nonuniform distribution of the point defects responsible for the impurity diffusion allows one to draw a conclusion regarding the character of the diffusion mechanism. For example, by simulating the impurity redistribution investigated in [17], it was shown in [18] that the radiation-enhanced diffusion of boron during proton bombardment of a silicon substrate having an elevated temperature occurs due to the equilibrium "impurity atom -intrinsic point defect" pairs. It follows from [19,20] that the vacancy-type defects are formed in the region between the surface and the average projective range of implanted ions R p (more exactly, in the vicinity of R p /2), whereas the interstitial stacking faults are formed near R p and deeper inside.…”

Section: Preliminary Studies Of the Radiation-enhanced Diffusionmentioning

confidence: 99%

Radiation-enhanced diffusion of impurity atoms in silicon layers

Velichko¹

2014

Preprint

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Modeling of the phosphorus radiation-enhanced diffusion in the course of implantation of high-energy protons into an elevated-temperature silicon substrate and during its treatment in a hydrogen-containing plasma with addition of a diffusant has been carried out. It follows from the results obtained that the radiation-enhanced diffusion occurs by means of formation, migration, and dissociation of "impurity atom -silicon self-interstitial" pairs being in a local thermodynamic equilibrium with substitutionally dissolved impurity atoms and nonequilibrium point defects generated due to external irradiation.The resulting value of the average migration length of nonequilibrium silicon selfinterstitials decreases from 0.19 µm for proton energy of 140 keV to 0.09 and 0.08 µm for energies of 110 and 80 keV, respectively. The decrease of the average migration length with the proton energy can be due to the interaction of silicon self-interstitials with the vacancies generated at the surface or with the defects formed in the phosphorus implanted region.Based on the pair diffusion mechanism, a theoretical investigation of the form of impurity profiles that can be created in thin silicon layers due to the radiation-enhanced diffusion was carried out. It is shown that depletion of the uniformly doped silicon layer occurs during plasma treatment except for the silicon -insulator interface where a narrow region with a high impurity concentration is formed. The results of calculations give a clear evidence in favor of further investigation of various doping processes based on the radiation-enhanced diffusion, especially the processes of plasma doping, to develop a cheap method for the formation of strictly assigned impurity distributions in the local semiconductor domains.

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Impurity-peak formation during proton-enhanced diffusion of phosphorus and boron in silicon

Cited by 38 publications

References 26 publications

Microscopic mechanism responsible for radiation-enhanced diffusion of impurity atoms

Microscopic mechanism responsible for radiation-enhanced diffusion of impurity atoms

Vacancies and Self‐Interstitials in Silicon: Generation and Interaction in Diffusion

Radiation-enhanced diffusion of impurity atoms in silicon layers

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