Impurity-Free Vacancy Diffusion Technique for InGaAsP/InP Multiple Quantum Well Laser Structure

Abstract

Bandgap tuning of the InGaAsP/InP multiple quantum well (MQW) laser structure by the impurity-free vacancy di usion (IFVD) is investigated using photoluminescence. It has been demonstrated that the e ects of the plasma bo m bardment to the sample surface involved in the IFVD technique can enhance the intermixing of the InGaAsP/InP MQW laser structure. The reliability of the IFVD technique, particularly the e ects of the surface decomposition and the intrinsic defects formed in the growth or preparation of the wafer, has be e ndiscussed.