Impurity dependent semiconductor type of epitaxial CuFeO2 (111) thin films deposited by using a pulsed laser deposition

Structural and magnetic properties of epitaxial delafossite CuFeO2 thin films grown by pulsed laser deposition

“…Pulsed laser deposition (PLD) has been shown to produce epitaxial, mostly single phase films of CuFeO 2 . 12,13 In Ref. 12, thin films of CuFeO 2 were grown on amorphous glass substrates.…”

“…12,13 In Ref. 12, thin films of CuFeO 2 were grown on amorphous glass substrates. Growth pressures between 0.1 and 5 mTorr oxygen and the same substrate temperature of 750 C were tested, and 1 mTorr was found as the best growth pressure, when out-of-plane oriented, in-plane textured (0001) CuFeO 2 films were formed.…”

Microstructural and transport properties of Mg doped CuFeO2 thin films: A promising material for high accuracy miniaturized temperature sensors based on the Seebeck effect

“…CuFe02 has given rise to renewed interest in the recent years due to its photocatalytic properties for hydrogen production (17,(25)(26)(27) as well as photovoltaic (28] properties. Few authors have prepared this CuFeOz material in thin film form using different deposition techniques such as pulsed laser deposition (29)(30)(31)(32), radio frequency sputtering (33,34 ], spin coating (35)(36)(37), electrodeposition (38] and spray pyrolysis (39 ]. In addition, the thermoelectric behavior of doped or undoped CuFe0 2 was rarely studied on thin films.…”

Room temperature deposition of amorphous p-type CuFeO2 and fabrication of CuFeO2/n-Si heterojunction by RF sputtering method

“…CFO is a well-known p-type semiconductor with the largest conductivity at room temperature (σ RT =1.53 −1 cm −1 ) among the delafossites, when an off-stoichiometric CuFeO 2+δ phase is formed [7]. * Author for correspondence (xdfang@aiofm.ac.cn) Polycrystalline CFO thin films have been prepared by pulsed laser deposition, electrodeposition radio-frequency sputtering and sol-gel method with conductivity varied from insulation to 1.7 −1 cm −1 [8][9][10][11][12][13][14]. In our previous studies, the effects of oxygen partial pressure on the structural, optical and electrical properties of CFO thin films deposited on Al 2 O 3 (001) substrate by RF sputtering were studied [15].…”