Impulse stimulated “explosive” crystallization of sputter deposited amorphous (In,Ga)Sb films

Wickersham, C. E.; Bajor, G.; Greene, J. E.

doi:10.1016/0038-1098(78)91041-4

Cited by 66 publications

(33 citation statements)

References 8 publications

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“…As a result there are large variations in the growth rate (of order 10 to 50 percent) which would be expected to affect the morphology of the growing crystal. Assuming this to be the case we can compare our results with the following experimental observations of Wickersham et al [8].…”

Section: Comparison With Experimental Observationssupporting

confidence: 71%

“…In several of the latter experiments the crystalline phase exhibits periodic variations in the height of the layer [4,8]. Far from the initiation point, the structure is often essentially one-dimensional, resembling a frozen-in pattern of parallel water waves near a beach.…”

Section: Introductionmentioning

confidence: 98%

“…Under favorable experimental conditions, layers of amorphous Sb [3][4][5][6][7][8], Ge [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24], Si [24][25][26][27][28] and other materials [29,30] can crystallize very rapidly when crystallization is initiated by a laser pulse or by impact with a stylus. The name explosive crystallization stems from the fact that the speed of the crystallization front can be of the order of meters per second.…”

Section: Introductionmentioning

confidence: 99%

“…In materials like Sb [3][4][5][6][7][8], Bi [30] or Yb [30], on the other hand, self-sustained crystallization waves have been observed that propagate through the whole layer (often a few micron thick) after being initiated at a single spot. In several of the latter experiments the crystalline phase exhibits periodic variations in the height of the layer [4,8].…”

Section: Introductionmentioning

confidence: 99%

“…Far from the initiation point, the structure is often essentially one-dimensional, resembling a frozen-in pattern of parallel water waves near a beach. Wickersham et al [8] noted that the undulations could have a thermal origin, since the wavelength h in their experiments was roughly equal to the thermal length ~/Vav (here K is the thermal diffusivity which we assume for simplicity is the same 0167-2789/84/$03.00 © Elsevier Science Publishers B.V.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Surface undulations in explosive crystallization: A nonlinear analysis of a thermal instability

Saarloos

Weeks

1984

Physica D: Nonlinear Phenomena

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Section: Comparison With Experimental Observationssupporting

confidence: 71%

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Surface undulations in explosive crystallization: A nonlinear analysis of a thermal instability

Saarloos

Weeks

1984

Physica D: Nonlinear Phenomena

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Competing Crystal Growth in Ge–Sb Phase‐Change Films

Eising

Niebuur

Pauza

et al. 2013

Adv Funct Materials

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Analysis of crystal growth in thin films of phase‐change materials can provide deeper insights in the extraordinary phase transformation kinetics of these materials excellently suited for data storage applications. In the present work crystal growth in GexSb100‐x thin films with x = 6, 7, 8, 9, and 10 is studied in detail, demonstrating that the crystallization temperature increases from ∼80 °C for Ge6Sb94 to ∼200 °C for Ge10Sb90 and simultaneously the activation energy for crystal growth also significantly increases from 1.7 eV to 5.5 eV. The most interesting new finding is that in the thin films containing 8, 9, and 10 at% Ge two competing growth modes occur which can have several orders of magnitude difference in growth rate at a single external temperature: an initial mode with isotropic slow growth producing circular crystals with smooth surfaces and growth fronts and a fast growth mode producing crystals with triangular shape having rough surfaces and growth fronts indicative of dendritic‐like growth. The slow‐growth mode becomes increasingly dominant for crystallization at low temperatures when the Ge concentration is increased from 8 to 10 at% Ge. For a certain Ge concentration, the slow growth mode becomes increasingly dominant at lower temperatures and the fast growth mode at higher temperatures. Latent heat produced during crystallization is considered a principal factor explaining the observations. The fast growth mode is associated with (eutectic) decomposition generating more latent heat and instable growth fronts and the slow growth mode is associated with thermodynamically less stable homogeneously alloyed crystals generating less latent heat, but stable growth fronts.

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Chalcogenides by Design: Functionality through Metavalent Bonding and Confinement

2020

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unprecedented progress of the semiconductor industry and information technology. Yet, we have reached a stage where a simple evolution along established research lines might no longer bear much fruit. Advanced functional materials require increasingly complex and demanding property combinations. Their optimization would thus benefit from novel concepts. In thermoelectrics, which convert waste heat into electricity, for example, materials must show the unusual combination of high electrical and small thermal conductivity. This is demanding since a high electrical conductivity is usually accompanied by a high thermal conductivity. In phase change materials (PCMs) employed for data storage and processing, materials are required which possess a pronounced contrast in optical and/or electrical properties between two different states. Usually one of these states is a metastable one, which is typically amorphous, while the second state is then stable crystalline. The metastable state has to be stable at room temperature and slightly above for 10 years; but it should crystallize, i.e., return to the stable crystalline state in a few nanoseconds if heated to temperatures of typically around 500 °C. The combination of pronounced property contrast and hence presumably different atomic arrangements in the two different phases, yet rapid crystallization is indicative for an unusual correlation of chemical bonding, atomic arrangement, and resulting properties, including crystallization kinetics. Topological insulators, expected to help realize novel electronic functionalities, possess topologically protected spin-polarized surface states with high mobility. These states should govern the sample conductivity, if the bulk is insulating.This raises the question how these demanding requirements can be met and how superior materials can be identified. A number of different approaches have been developed in the past two decades to meet these needs. Combinatorial material synthesis, i.e., the fast preparation of stoichiometric libraries and their efficient analysis to identify superior compounds, has already been promoted over two decades ago. [1,2] While this scheme has indeed been successful in improving certain materials such as metal hydrides for hydrogen storage [3] and benchmarking electrocatalysts for solar water splitting, [4] for many material classes still empirical optimization schemes are employed. Machine learning is an emerging strategy to identify materials with a unique property portfolio. [5][6][7] This novel A unified picture of different application areas for incipient metals is presented. This unconventional material class includes several main-group chalcogenides, such as GeTe, PbTe, Sb 2 Te 3 , Bi 2 Se 3 , AgSbTe 2 and Ge 2 Sb 2 Te 5 . These compounds and related materials show a unique portfolio of physical properties. A novel map is discussed, which helps to explain these properties and separates the different fundamental bonding mechanisms (e.g., ionic, metallic, and covalent). The map also provides evidence ...

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Impulse stimulated “explosive” crystallization of sputter deposited amorphous (In,Ga)Sb films

Cited by 66 publications

References 8 publications

Surface undulations in explosive crystallization: A nonlinear analysis of a thermal instability

Surface undulations in explosive crystallization: A nonlinear analysis of a thermal instability

Competing Crystal Growth in Ge–Sb Phase‐Change Films

Chalcogenides by Design: Functionality through Metavalent Bonding and Confinement

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