Impulse Response Time Measurements in Hg0.7Cd0.3Te MWIR Avalanche Photodiodes

Perrais, Gwladys; Rothman, J.; Destéfanis, G.; Chamonal, Jean-Paul

doi:10.1007/s11664-008-0459-7

Cited by 46 publications

(26 citation statements)

References 17 publications

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“…. High avalanche gain (~10 4 ) at low reverse bias, low excess noise factor (F~1), high gain bandwidth product (GBW) ~2.1 THz and very short integration time~ 70 ps make HgCdTe APD to be suitable for low optical signal and high speed applications 47,53 . It can be used in the active gated 2D or 3D mode for identification of targets 57 .…”

Section: Ii-vi Materials Based Apdsmentioning

confidence: 99%

“…However, they reported that the planar APD structure provides fill factor~ 100 % and the collection efficiency > 90%, whereas HDVIP diode has advantage to yields low dark current, high quantum efficiency and high operability. 39,47 . They are first to measure the impulse response time for front side illuminated n-on-p MWIR HgCdTe e-APD at 77 K with λ = 1.55 μm laser pulse 47 .…”

Section: Development Of Hgcdte Based Apd Device Technologymentioning

confidence: 99%

“…39,47 . They are first to measure the impulse response time for front side illuminated n-on-p MWIR HgCdTe e-APD at 77 K with λ = 1.55 μm laser pulse 47 . The response time is recorded as the rise time of t 10-90 = 88 ps and a fall time of t 90-10 = 2.4 ns.…”

Section: Development Of Hgcdte Based Apd Device Technologymentioning

confidence: 99%

“…HgCdTe APD is an attractive choice for many IR applications such as LIDAR/ LADAR, defence, night vision, optical communications & atmospheric studies [9][10][11][45][46] . HgCdTe based SWIR APDs can be used as sensor in the LADAR system or 3-D imaging applications 40,[47][48][49][50][51][52][53][54][55][56][57][58][59][60] . CEA-LETI has been involved in the development of HgCdTe based e-APD focal plane array for Passive (thermal imaging) and active (2D/3D flash LADAR imaging) imaging since last a few years.…”

Section: Applicationsmentioning

confidence: 99%

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Infrared Avalanche Photodiode Detectors

Singh

Pal

2017

Def. Sc. Jl.

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This study presents on the design, fabrication and characteristics of HgCdTe mid-wave infrared avalanche photodiode (MWIR APD). The gain of 800 at -8 V bias is measured in n + -ν-p + detector array with pitch size of 30 μm. The gain independent bandwidth of 6 MHz is achieved in the fabricated device. This paper also covers the status of HgCdTe and III-V material based IR-APD technology. These APDs having high internal gain and bandwidth are suitable for the detection of attenuated optical signals such as in the battle field conditions/long range imaging in defence and space applications. It provides a combined solution for both detection and amplification if the detector receives a very weak optical signal. HgCdTe based APDs provide high avalanche gain with low excess noise, high quantum efficiency, low dark current and fast response time.

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Section: Ii-vi Materials Based Apdsmentioning

confidence: 99%

Section: Development Of Hgcdte Based Apd Device Technologymentioning

confidence: 99%

Section: Development Of Hgcdte Based Apd Device Technologymentioning

confidence: 99%

Section: Applicationsmentioning

confidence: 99%

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Infrared Avalanche Photodiode Detectors

Singh

Pal

2017

Def. Sc. Jl.

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“…The exclusive electron multiplication in MCT APDs is a major advantages, as it implies that only one transit time needs to be accounted for each type of carriers. Hence, the gain do not directly influence the transit time why ultra-high gain bandwidth products can be achieved in theses detectors [5,6,7]. The highest measured bandwidth of 800 MHz for M=100 is thought to be limited by impedance miss-match in the inter-connexion circuit used to enable a backside illumination of the diode [7].…”

Section: Introductionmentioning

confidence: 99%

HgCdTe APDS for time resolved space applications

Rothman

Lasfargues

Delacourt

et al. 2017

International Conference on Space Optics — ICSO 2016

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I. INTRODUCTIONHgCdTe APDs have opened a new horizon in photon starved applications due to their exceptional performance in terms of high linear gain, low excess noise and high quantum efficiency. Both focal plane arrays (FPAs) and large array single element using HgCdTe (MCT) APDs have been developed at CEA/Leti and Sofradir and high performance devices are at present available to detect without deterioration the spatial and/or temporal information in photon fluxes with a low number of photon in each spatio-temporal bin. The enhancement in performance that can be achieved with MCT has subsequently been demonstrated in a wide scope of applications such as astronomical observations, active imaging, deep space telecommunications, atmospheric LIDAR and mid-IR (MIR) time resolved photoluminescence measurements. Most of these applications can be used in space borne platforms.In the present communication we will focus on our recent development and tests of detectors for applications that only require the temporal information and can be addressed using single element MCT APDs, such as LIDAR and high data rate free-space optical communication. The use of MCT APD for these applications will be discussed in section II in perspective of how the gain, dark current and response time varies as a function of Cd composition and operating temperature. The discussion will be illustrated, in section III, by the performance obtained detector assemblies using large area high operating temperature (190 K) APDs, in which we typically obtain noise equivalent powers in the range of 25-80 fW/√Hz for bandwidth ranging from 20 to 200 MHz. In particular, we report results obtained on an APD detector that has been used by Laboratorie de Meterologie Dynamique (LMD) to perform DIAL-LIDAR measurements at 2 µm up to distance close to 10 km and discuss the performances that can be achieved using MCT APDs in free space optical telecommunications up to 10 Gbit/s data rates and/or at single photon detection limit.The results of first space reliability tests made on Leti HgCdTe APDs, in collaboration with CNES are presented in section IV. The space reliability test consisted of proton irradiation and endurance at T=-85 °C operation and with variable reverse bias. The conclusion and perspective for the use of HgCdTe APDs for space applications are finally presented in section V.

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Applying 2DEG in High‐Performance Mid‐Infrared Photodetection

Wang

Shen

et al. 2023

Advanced Optical Materials

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High‐speed and highly sensitive infrared photodetectors are regarded as one of the most essential components in modern photonic devices and technology because of constantly emerging application scenarios. In this paper, an ultrafast and extremely low noise mid‐infrared (MIR) photodetector is reported at both room and cryogenic temperatures by leveraging the high‐mobility 2D electron gas (2DEG) at the polar CdTe/PbTe heterostructure interface. The detector simultaneously exhibits a peak detectivity of ≈4.2 × 1011 Jones with rapid response in the order of 10 ns, which is substantially superior to the state‐of‐the‐art 2DEG MIR detectors made of 2D layered materials. The ultrafast response with extremely low noise of the 2DEG photodetector is attributed to the unique band alignment at the interface. The practical infrared imaging application is further showcased using the 2DEG MIR detector by revealing the fine features of a MIR radiation target. This work highlights the promising prospect of utilizing the unique 2DEG interface in the field of high‐speed and highly sensitive MIR detection.

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Impulse Response Time Measurements in Hg0.7Cd0.3Te MWIR Avalanche Photodiodes

Cited by 46 publications

References 17 publications

Infrared Avalanche Photodiode Detectors

Infrared Avalanche Photodiode Detectors

HgCdTe APDS for time resolved space applications

Applying 2DEG in High‐Performance Mid‐Infrared Photodetection

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