Improving thermoelectric properties of n-type bismuth–telluride-based alloys by deformation-induced lattice defects and texture enhancement

Hu, Lipeng; Liu, X.H.; Xie, Hanhui; Shen, Jizhong; Zhu, Tiejun; Zhao, Xinbing

doi:10.1016/j.actamat.2012.05.008

Cited by 145 publications

(135 citation statements)

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“…On the other hand, spark plasma sintering has significant features, including discharge between the sintering particles, 41 which might somehow affect the charged lattice defects as well as the microstructures. Moreover, in this work the optimization of the electrical and thermal performances were simultaneously realized, which was not achieved in the studies by Hu et al 33,40 CONCLUSIONS This work demonstrated the enhancement of ZT in n-type Bi 2 (TeSe) 3 alloys, which is required for matching the high performances of p-type (BiSb) 2 Te 3 alloys to manufacture high-efficiency thermoelectric devices. A significant ZT enhancement was achieved in compositionally optimized n-type Bi 2 (TeSe) 3 resulting in a large ZT max 41.1 at 473 K. This result was realized by simply optimizing the texturing temperature for a repeated SPS process as hot-forging.…”

Section: Thermoelectric Propertiesmentioning

confidence: 79%

“…Figure 9b further presents the ZT max (gray columns) as well as the parameter (μ H /κ l )(m*/m 0 ) 3/2 (blue circles), which is proportional to the thermoelectric efficiency, 14 when compared with the ingots prepared by zone melting (red column) 15 and Bridgman methods (green column) 39 and with the ZT values of the textured samples. 33,40 Large improvements for both the ZT max and (μ H /κ l )(m*/m 0 ) 3/2 have been achieved using a texturing treatment, and the highest (μ H /κ l ) (m*/m 0 ) 3/2 up to 29.5 × 10 − 3 m 3 K V − 1 s − 1 W − 1 was obtained for the sample TP 460-3. The performance enhancement is a result of the texture-enhanced electrical transport properties, and the nanoscale defects suppressed the thermal conductivity.…”

Section: Thermoelectric Propertiesmentioning

confidence: 94%

“…Compared with work by Hu et al, 40 in which a top-down texture method was applied to Bi 2 Te 2 Se 1 alloys, in this work nanoscale inhomogeneities could be introduced at appropriate temperatures to effectively decrease the lattice thermal conductivity and resulting in increased ZT values. Such temperature-controlled microstructure and nanostructure modulation is important for thermoelectric performance enhancement.…”

Section: Thermoelectric Propertiesmentioning

confidence: 99%

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Thermoelectric performance enhancement in n-type Bi2(TeSe)3 alloys owing to nanoscale inhomogeneity combined with a spark plasma-textured microstructure

Pan

2016

NPG Asia Mater

157

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Bi 2 Te 3 is a good thermoelectric compound that can be adjusted to p-or n-type with corresponding substitutions; however, less progress has been achieved for the property enhancement of n-type Bi 2 (TeSe) 3 compared with p-type (BiSb) 2 Te 3 . Textured n-type Bi 2 (TeSe) 3 with an enhanced thermoelectric performance has been developed in this study by combining texturing with in situ nanostructuring effects. The spark plasma-textured structure boosts the electrical transport properties and the power factors as benefits of the layered microstructure. It also leads to a simultaneous rise in the thermal conductivity along the a-axis. We developed a method to suppress increases in the thermal conductivity by inducing nanostructures, such as highly distorted regions and nanoscopic defect clusters, as well as dislocation loops that can form when texturing occurs at an optimized temperature. In this work, textured n-type Bi 2 (TeSe) 3 materials having enhanced thermoelectric performances within a low temperature range are developed with a maximum dimensionless figure of merit (ZT max ) exceeding 1.1 at 473 K. The present method, which synergetically utilizes the texturing and nanostructuring effects, could also be applied to other thermoelectric compounds having layered structures.

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Section: Thermoelectric Propertiesmentioning

confidence: 79%

Section: Thermoelectric Propertiesmentioning

confidence: 94%

Section: Thermoelectric Propertiesmentioning

confidence: 99%

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Thermoelectric performance enhancement in n-type Bi2(TeSe)3 alloys owing to nanoscale inhomogeneity combined with a spark plasma-textured microstructure

Pan

2016

NPG Asia Mater

157

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“…24 Strongly anisotropic crystalline materials such as Bi 2 Te 3 can be expected to be isotropic within the plane perpendicular to the pressing direction but can have very different transport properties along the pressing direction. 25 The properties of melt-grown ingots may have properties that change along the length of the ingot, and each slice may make a different study.…”

Section: B Application In Thermoelectricsmentioning

confidence: 99%

Measurement of the electrical resistivity and Hall coefficient at high temperatures

Borup

Toberer

Zoltan

et al. 2012

Review of Scientific Instruments

231

213

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Study of laser megajoule calorimeter's thermal behaviour for energy measurement uncertainty optimisation Rev. Sci. Instrum. 84, 014902 (2013) Impedance spectroscopy on ceramic materials at high temperatures, considering stray fields and electromagnetic noise Rev. Sci. Instrum. 84, 015118 (2013) An apparatus for concurrent measurement of thermoelectric material parameters Rev. Sci. Instrum. 84, 013907 (2013) Casimir probe based upon metallized high Q SiN nanomembrane resonator Rev. Sci. Instrum. 84, 015115 (2013) Four-electrode impedance spectrometer for investigation of solid ion conductors Rev. Sci. Instrum. 84, 013902 (2013) Additional information on Rev. Sci. Instrum. The implementation of the van der Pauw (VDP) technique for combined high temperature measurement of the electrical resistivity and Hall coefficient is described. The VDP method is convenient for use since it accepts sample geometries compatible with other measurements. The technique is simple to use and can be used with samples showing a broad range of shapes and physical properties, from near insulators to metals. Three instruments utilizing the VDP method for measurement of heavily doped semiconductors, such as thermoelectrics, are discussed.

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“…More recently, we found that HD can also be used to improve the TE performance of n-type bismuth telluride-based materials because of multi-scale microstructural effects including microscale texture enhancement, lattice defects and donor-like effects at the atomic scale, and recrystallization-induced local nanostructures. 22,23 The ternary alloy Bi 0.5 Sb 1. 5 Te 3 has been so far the bestknown p-type materials for room-temperature refrigeration.…”

Section: Introductionmentioning

confidence: 99%

Shifting up the optimum figure of merit of p-type bismuth telluride-based thermoelectric materials for power generation by suppressing intrinsic conduction

et al. 2014

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The abundance of low-temperature waste heat produced by industry and automobile exhaust necessitates the development of power generation with thermoelectric (TE) materials. Commercially available bismuth telluride-based alloys are generally used near room temperature. Materials that are composed of p-type bismuth telluride, which are suitable for low-temperature power generation (near 380 K), were successfully obtained through Sb-alloying, which suppresses detrimental intrinsic conduction at elevated temperatures by increasing hole concentrations and material band gaps. Furthermore, hot deformation (HD)-induced multi-scale microstructures were successfully realized in the high-performance p-type TE materials. Enhanced textures and donor-like effects all contributed to improved electrical transport properties. Multiple phonon scattering centers, including local nanostructures induced by dynamic recrystallization and high-density lattice defects, significantly reduced the lattice thermal conductivity. These combined effects resulted in observable improvement of ZT over the entire temperature range, with all TE parameters measured along the in-plane direction. The maximum ZT of 1.3 for the hot-deformed Bi 0.3 Sb 1.7 Te 3 alloy was reached at 380 K, whereas the average ZT av of 1.18 was found in the range of 300-480 K, indicating potential for application in low-temperature TE power generation. Keywords: bismuth telluride; donor-like effect; hot deformation; low-temperature power generation; texture INTRODUCTION Thermoelectric (TE) devices have attracted extensive interest over the past few decades because of their potential use in direct thermal-toelectrical energy conversion and solid-state refrigeration. The TE conversion efficiency of a material can be gauged by the dimensionless figure of merit ZT ¼ a 2 sT/k, where a, s, k and T are the Seebeck coefficient, the electrical conductivity, the thermal conductivity and the operating temperature, respectively. 1 Continuous effort has been invested toward improving the ZT values of TE materials, resulting in significant advances through phonon engineering 2-9 and band engineering. [10][11][12][13][14] For example, remarkable increases in ZT have been achieved in bulk nanomaterials via the enhancement of phonon scattering at boundaries to reduce lattice thermal conductivities. 2,4,6,7 Currently, the best commercial TE materials near room temperature are still rhombohedral bismuth tellurides and related solid solutions fabricated by unidirectional crystal growth. [15][16][17] Nanostructuring strategies have been devised to prepare highperformance bismuth telluride-based alloys, including bottom-up

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Improving thermoelectric properties of n-type bismuth–telluride-based alloys by deformation-induced lattice defects and texture enhancement

Cited by 145 publications

References 40 publications

Thermoelectric performance enhancement in n-type Bi2(TeSe)3 alloys owing to nanoscale inhomogeneity combined with a spark plasma-textured microstructure

Thermoelectric performance enhancement in n-type Bi2(TeSe)3 alloys owing to nanoscale inhomogeneity combined with a spark plasma-textured microstructure

Measurement of the electrical resistivity and Hall coefficient at high temperatures

Shifting up the optimum figure of merit of p-type bismuth telluride-based thermoelectric materials for power generation by suppressing intrinsic conduction

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