Improving thermal stability of perovskite solar cell through interface modification by PbS quantum dots

Díaz-Cruz, Evelyn B.; Regalado-Pérez, E.; Cruz-Gómez, J.; Mathew, Xavier; Moure-Flores, F. de; Paraguay‐Delgado, F.; Santos‐Cruz, J.

doi:10.1109/cce53527.2021.9633033

Cited by 1 publication

(1 citation statement)

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“…Even films can be grown by electrochemical deposit. Within physical processes, it is possible to grow thin films by sputtering; pyrolysis spray, electron gun evaporation and vacuum evaporation, among others 7,[12][13][14][15] Vacuum evaporation is a simple, replicable and fast technique used to deposit thin films from high purity materials 16 . In this work the vacuum evaporation technique was used to deposit satisfactory thin layers of bismuth sulfide, polycrystalline, very close to the stoichiometry of the compound, and with good electro-optical properties; this technique has been little used, although it has the advantage of being highly reproducible 17 .…”

Section: Introductionmentioning

confidence: 99%

Optoelectronic Properties of Bismuth Sulfide Thin Films Grown by PVD

et al. 2022

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Bismuth (III) sulfide thin films are prepared on glass substrates by physical vapor deposition technique. Then, the films are annealed at different temperatures from 150 to 350°C with nitrogen and nitrogen-sulfur atmospheres, respectively. The effect of annealing temperature on the optoelectronic properties is investigated. The layers were characterized using ultraviolet-visible spectroscopy, XRD, Raman spectroscopy, EDS analysis and Hall effect. The film annealed at 250°C in a nitrogen-sulfur atmosphere exhibited the best condition with an initial thickness of 106 nm and band gap of 1.37 eV. Also, Bismuthinite phase was obtained, close to the stoichiometry with 59.95 and 40.05 at % for bismuth and sulfur, respectively. The charge carrier concentration of 6.9x10 19 cm -3 with a n-type conductivity, the resistivity of 0.19 Ω-cm, and mobility of 0.44 cm 2 V -1 s -1 are obtained.

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