Improving the RF Performance of Carbon Nanotube Field Effect Transistor

Hamieh, S.

doi:10.1155/2012/724121

Cited by 4 publications

(2 citation statements)

References 19 publications

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“…This is because C of and C gtg change in opposite directions with L SD as shown in figure 5. Improvement of the circuit's high -frequency response can be done by decreasing the volume of the gate in order to get a smaller gate capacitance, for example, using a multi-finger gate structure [29].…”

Section: Cut-off Frequency Of a Cntfetmentioning

confidence: 99%

Modification of a carbon nanotube FET compact model for digital circuit simulation

Cheng¹,

Zhu²,

Wu³

et al. 2020

Semicond. Sci. Technol.

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Carbon nanotube field-effect transistor (CNTFET) based circuit systems ha ve received extensive attention due to their energy-efficiency benefits. However, there is not yet a generally accepted compact SPICE model for CNTFETs compatible with existing electronics design automation platforms. In this paper, the Stanford top gate CNTFET model is optimized through the consideration of different doping levels in source/drain as well as the simplification of an equivalent capacitance network in the intrinsic channel. Based on this, compact models are built for both top gate and wrapped gate CNTFETs. Then the DC properties and the cut-off frequency of top gate and wrapped gate CNTFETs with 15 nm channel length, and their basic logic circuits based on our modelling, are simulated by HSPICE. In the circuit simulation, we add the influence of gate-to-gate capacitance. The influences of structural parameters such as the diameter, number of CNTs and their gap on the current-voltage property, transconductance, cut-off frequency, circuit delay and power consumption are studied. Through comparison with the simulation using the Stanford model, our modelling is more suitable for the design and development of CNTFET circuits. For given parameters, the top gate CNTFETs have a larger maximum cut-off frequency and the wrapped gate CNTFETs' saturate current is larger. Wrapped gate logic circuits have less delay but more dynamic power than top gate circuits. More CNTs in FETs with a bigger gap and shorter tube pitch lead to less circuit delay and more dynamic power.

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Section: Cut-off Frequency Of a Cntfetmentioning

confidence: 99%

Modification of a carbon nanotube FET compact model for digital circuit simulation

Cheng¹,

Zhu²,

Wu³

et al. 2020

Semicond. Sci. Technol.

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“…The stepwise doping in the channel region of the CNTFET is introduced to improve the short channel effect, and the device is simulated using the Poisson and Green function equations [13]. The array of nanotubes in the channel of a CNTFET is investigated for high frequency and to reduce parasitic capacitance [14]. Using the green function method, asymmetric doping in the channel CNTFET is investigated to improve the Ion/Ioff current [15].…”

Section: Introductionmentioning

confidence: 99%

Performance Analysis of Photovoltaic Effect on Tunneling Carbon Nano Tube Field Effect Transistor with Gaussian Doping

Rajamani,

Kavitha

2024

Preprint

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Technology advancement achieves high efficiency with low power. T-CNTFET with low power dissipation in high-speed applications is a suitable candidate for study. Due to the nanometer dimensions of CNTFETs, challenges such as the inability to achieve, reduced leakage current and sub-threshold swing, and increased transconductance and frequency cut are encountered. In addition, low ON current and ambipolar conduction are other drawbacks of conventional T-CNTFETs. Gaussian doping in the channel region of a newly developed design of tunneling carbon nanotube field effect transistor (T-CNTFET) is being evaluated for its performance. Doping is responsible for the short channel effect, increased ON current, and decreased cut-off frequency. There are three tiers of doping in effect. Doping is most concentrated at the drain and source ends of the channel and least concentrated in the central portion of the channel. Two-dimensional self-consistent Poisson and Schrodinger equations are used to model the apparatus. The differential method and the Green's function are used to resolve these equations. The simulation displays performance improvement in terms of transconductance, cutoff frequency, and sub-threshold swing when compared between existing and newly designed doped T-CNTFETs. Photo detectors are extensively used in many applications of communication systems.

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