Improving the modulation bandwidth of LED by CdSe/ZnS quantum dots for visible light communication

Xiao, Xun; Tang, Haodong; Zhang, Tianqi; Chen, Wei; Chen, Wanli; Wu, Dan; Wang, Rui; Wang, Kai

doi:10.1364/oe.24.021577

Cited by 58 publications

(51 citation statements)

References 17 publications

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“…One of the current bottleneck for VLC technology is the limited bandwidth of the light sources. Devices are currently often based on a high energy blue LED that excites broadly emitting phosphors with long PL lifetimes (microseconds range) . These long lifetimes reduce the switching speed of the devices and thereby the maximum data rate.…”

Section: Future Potentialmentioning

confidence: 99%

“…Furthermore, the differently emitting QDLEFETs (at least three in RGB) could be used as separate sources and thereby increase the data rate . A first step toward this implementation has been carried out already by using CQDs as downconverting emitter excited by a blue LED . Unfortunately, though, frequency‐dependent data on QDLEFET emission is so far lacking in the literature and should be included in future research projects.…”

Section: Future Potentialmentioning

confidence: 99%

Section: Future Potentialmentioning

confidence: 99%

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Quantum Dot Light‐Emitting Transistors—Powerful Research Tools and Their Future Applications

Kahmann

Shulga

Loi

2019

Adv Funct Materials

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In this progress report, the recent work in the field of light-emitting field-effect transistors (LEFETs) based on colloidal quantum dots (CQDs) as emitters is highlighted. These devices combine the possibility of electrical switching, as known from field-effect transistors, with the possibility of light emission in a single device. The properties of field-effect transistors and the prerequisites of LEFETs are reviewed, before motivating the use of colloidal quantum dots for light emission. Recent reports on these quantum dot light-emitting field-effect transistors (QDLEFETs) include both materials emitting in the near infrared and the visible spectral range-underlining the great potential and breadth of applications for QDLEFETs. The way in which LEFETs can further the understanding of the CQD material properties-their photophysics as well as the carrier transport through films-is discussed. In addition, an overview of technology areas offering the potential for large impact is provided.channel is separated from the gate by an insulating gate dielectric. Gate electrode, dielectric, and channel form a capacitor that allows for charge accumulation at the channel-dielectric interface, through which the conductivity of the channel is modulated.Most commonly, the semiconducting material in the channel is doped and the FETs work through the conduction of either holes or electrons (unipolar FET). Such FETs are classified according to their working principle into inversion-mode or accumulation mode devices. For example, in n-channel inversion-mode FETs, the channel region is p-doped, and the source and drain regions are n-type semiconductors. By applying a positive gate voltage, the semiconductor at the interface with the gate dielectric inverts from p-type to n-type (inversion layer) and the channel becomes conductive. This mode is the most common operating mode of silicon metal-oxide-semiconductor FETs (MOSFET).The standard characterization of an FET includes the measurement of the output and the transfer characteristics. For the former, the gate voltage V G is constant, and the drain current I D Simon Kahmann received a shared doctorate degree from

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Section: Future Potentialmentioning

confidence: 99%

Section: Future Potentialmentioning

confidence: 99%

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Quantum Dot Light‐Emitting Transistors—Powerful Research Tools and Their Future Applications

Kahmann

Shulga

Loi

2019

Adv Funct Materials

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“…荧光粉由于长的寿命会导致VLC具有窄的带宽, 会限制VLC的传输速率 [12] . 目前, 应用于VLC的荧光粉包括有机发光材料 [71,72] 和QD [73,74] . Chen等人 [76] 以热解法制备了CQDs, 并将其掺杂于…”

Section: 主要采用Led或者ld结合荧光粉来实现商用的稀土unclassified

Application advances of carbon quantum dots in optoelectronic devices

Xu¹,

Xu²,

Zheng³

et al. 2019

Chin. Sci. Bull.

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“…To make devices well response to the electrical signal, there would be a suitable bias adding to the wave to keep the devices on but not switch on and off frequently. Before measuring, we will adjust the bias and peak-to-peak value of wave to make sure devices work on linear region [4]. The PD (Type: THORLABS APD120A2/M) with bandwidth of 50 MHz could receive high frequency signals from QLED completely and converts to voltage signals in 5 ns.…”

Section: Introductionmentioning

confidence: 99%

P‐9.1: Investigation of Electroluminescent Response of Quantum Dot Light‐Emitting Diodes

Huang

Chen

2018

Symp Digest of Tech Papers

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Quantum‐dot light‐emitting diodes (QLEDs) may have revealing potential application in visible light communications (VLCs) because of their fast electroluminescent (EL) response. In this work, we systematically investigate the influence of device structures, the bias conditions and the device area on the EL response of QLEDs. To increase the response speed of QLEDs, the bias, the charge transport materials and the emitting area are carefully tuned. The optimized devices can well response when even driven by a signal with frequency of 10 MHz, and exhibit a delay time of 252 ns with a rise time of 390 ns and a fall time of 178 ns. Used in VLCs, the QLEDs can have a wide modulation bandwidth of 1.5 MHz. Our results indicate that QLEDs can be applied not only in fast response displays but also in VLCs.

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Improving the modulation bandwidth of LED by CdSe/ZnS quantum dots for visible light communication

Cited by 58 publications

References 17 publications

Quantum Dot Light‐Emitting Transistors—Powerful Research Tools and Their Future Applications

Quantum Dot Light‐Emitting Transistors—Powerful Research Tools and Their Future Applications

Application advances of carbon quantum dots in optoelectronic devices

P‐9.1: Investigation of Electroluminescent Response of Quantum Dot Light‐Emitting Diodes

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