Improving the laser damage resistance of oxide thin films and multilayers via tailoring ion beam sputtering parameters

Cosar, M.B.; Ozhan, A.E.S.; Aydogdu, G.H.

doi:10.1016/j.apsusc.2014.09.048

Cited by 9 publications

(2 citation statements)

References 6 publications

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“…When the annealing temperature rises to 933 K, the Ta 2 O 5 film is no longer amorphous and crystallizes to a hexagonal phase. Consequently, the temperature for phase conversion is between 923 and 933 K. It is a common view that a better laser-induced damage threshold (LIDT) could be obtained for amorphous optical films because it is easier to realize diffusion of the impurities in crystalline structured films, and this causes a local impurity region which is a grain boundary defect in the structure [11]. We also know that stress in the thin films can be introduced after phase conversion because of the boundary defect.…”

Section: Resultsmentioning

confidence: 99%

“…It is well known that dual ion beam sputtering (DIBS) technology is an effective coating deposition method to fabricate optical films with ultra-low loss, high packing density and a high laser-induced damage threshold (LIDT) [4,10,11]. The high-quality optical coating elements fabricated by IBS have been widely applied in many important engineering projects, such as the National Ignition Facility (NIF), Laser Interferometer Gravitational-wave Observatory (LIGO), etc.…”

Section: Introductionmentioning

confidence: 99%

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Effects of Annealing on Residual Stress in Ta2O5 Films Deposited by Dual Ion Beam Sputtering

Huang

Zhang

et al. 2018

Coatings

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Optical coatings deposited by the dual ion beam sputtering (DIBS) method usually show high compressive stress, which results in severe wavefront deformation of optical elements. Annealing post-treatment has been widely used to control the residual stress of optical coatings. However, the effect of annealing on the stress of Ta 2 O 5 films deposited by the IBS method has not been reported in detail. In this study, different thicknesses of Ta 2 O 5 films were deposited by IBS and annealed at different temperatures from 473 to 973 K in air, and the effect of annealing on the stress of Ta 2 O 5 films was investigated. The as-deposited Ta 2 O 5 films deposited by IBS show high compressive stress, which are about 160 MPa. The compressive stress decreases linearly with the increasing temperature, and the wavefront deformation of Ta 2 O 5 films increases linearly with film thickness (within 20 µm) at the same annealing temperature. When the temperature rises to 591 K, Ta 2 O 5 films with zero-stress can be obtained. Ta 2 O 5 films show tensile stress instead of compressive stress with further increasing annealing temperature, and the tensile stress increases with increasing temperature. Meanwhile, with the increasing annealing temperature, the refractive index of Ta 2 O 5 film decreases, indicating the decreasing packing density. The atomic force microscope (AFM) test results show that surface roughness of Ta 2 O 5 films slowly increases with the increasing of annealing temperature. Moreover, X-ray photoelectron spectroscopy (XPS) analysis shows that the Ta in Ta 2 O 5 films can be further oxidized with increasing annealing temperature, namely, the absorption of Ta 2 O 5 film can be reduced. X-ray diffraction (XRD) analysis shows that the annealing temperature should be below 923 K to maintain the amorphous structure of the Ta 2 O 5 film.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%