Improving the internal quantum efficiency of QD/QW hybrid structures by increasing the GaN barrier thickness

Jia, Zhigang; Hao, Xiaodong; Lü, Taiping; Dong, Hailiang; Ma, Shufang; Liang, Jinxing; Jia, Wei; Xu, Bingshe

doi:10.1039/d0ra05566b

RSC Adv.

2020

DOI: 10.1039/d0ra05566b

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Improving the internal quantum efficiency of QD/QW hybrid structures by increasing the GaN barrier thickness

Zhigang Jia

Xiaodong Hao

Taiping Lü

et al.

Abstract: High-density V-shaped pits cause that InGaN/GaN multi-quantum well becomes QD/QW hybrid structure, and the internal quantum efficiency of the hybrid structure is improved by increasing the thickness of GaN barrier.

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Cited by 3 publications

References 45 publications

(53 reference statements)

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Multi-color emission based on InGaN/GaN micro-truncated pyramid arrays

Jia,

Du,

Zhang

et al. 2024

AIP Advances

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3D micro-nano devices are expected to become the mainstay of multi-color solid-state lighting in the future because of their broad-band characteristic and the advantage of integrating the monolithic light-emitting diode on a single chip. In this work, InGaN/GaN micro-truncated pyramid arrays with six equivalent (101̄1) semi-polar facets and one (0001) polar facet were successfully prepared by the metal-organic chemical vapor deposition technology. The average diameter of the obtained uniform micro-truncated pyramids was 6.8 µm with a height of 2.4 µm. According to the results of micro-photoluminescence performed, the InGaN/GaN micro-truncated pyramid arrays can achieve multi-color emission from blue to red. The luminescent positions corresponding to different wavelengths were detected by the cathode luminescence spectrum. The multi-color emission was related to the quantum hybrid structures apart from the discrepancy of In composition in different positions. The developed microstructure can create multi-color emission by combining distinct luminescence modes, which can aid in the design of future optoelectronic devices.

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Multi-color emission based on InGaN/GaN micro-truncated pyramid arrays

Jia,

Du,

Zhang

et al. 2024

AIP Advances

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Influence of in volatilization on photoluminescence in InGaN/GaN multiple quantum wells

Shi

Wang

et al. 2021

mat express

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Two multiple quantum well (MQW) InGaN/GaN structures emitting green light, without (A) and with (B) an indium (In) volatilization suppression technique (IVST) during growth of the active region, were fabricated. The dependencies of the photoluminescence (PL) spectra upon temperature at different levels of excitation power were investigated. The results indicate that an IVST can increase the In content while suppressing the phase separation caused by volatilization of that In incorporated in the well layers. Also, compared with Structure B with IVST, which contains one phase structure, Structure A without IVST, which contains two separate phases (i.e., an In-rich phase and an In-poor phase), exhibits higher internal quantum efficiency (IQE) at low excitation power and lower IQE at high excitation power. The former is mainly attributed to the stronger In-rich phase-related localization effect of Structure A, because the In-rich phase-related emission dominates the PL spectra of Structure A at a low excitation power; the latter is mainly due to the In-poor phase-related weaker localization effect of Structure A, because the In-poor phase-related emission dominates the PL spectra of Structure A at high excitation power because localized states in this In-rich phase are saturated.

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Optical Properties of InGaN/GaN QW with the Same Well-Plus-Barrier Thickness

Hou

Chen

et al. 2022

Crystals

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Optical properties of wurtzite violet InGaN/GaN quantum well (QW) structures, with the same well-plus-barrier thickness, grown by metal-organic chemical vapor deposition (MOCVD) on c-plane sapphire substrates, were investigated using temperature-dependent photoluminescence (TDPL) and excitation-power-dependent photoluminescence (PDPL). Two samples were compared: one had a thicker well (InGaN/GaN 3/5 nm); the other had a thicker barrier (InGaN/GaN 2/6 nm). It was found that the GaN barrier thickness in the InGaN/GaN MQWs plays an important role in determining the optical characteristics of the MQWs. The peak energy of the two samples varied with temperature in an S-shape. The thicker-barrier sample had a higher turning point from blueshift to redshift, indicating a stronger localization effect. From the Arrhenius plot of the normalized integrated PL intensity, it was found that the activation energy of the nonradiative process also increased with a thicker barrier thickness. The radiation recombination process was dominated in the sample of the thicker barrier, while the non-radiation process cannot be negligible in the sample of the thicker well.

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Improving the internal quantum efficiency of QD/QW hybrid structures by increasing the GaN barrier thickness

Abstract: High-density V-shaped pits cause that InGaN/GaN multi-quantum well becomes QD/QW hybrid structure, and the internal quantum efficiency of the hybrid structure is improved by increasing the thickness of GaN barrier.

Cited by 3 publications

References 45 publications

Multi-color emission based on InGaN/GaN micro-truncated pyramid arrays

Multi-color emission based on InGaN/GaN micro-truncated pyramid arrays

Influence of in volatilization on photoluminescence in InGaN/GaN multiple quantum wells

Optical Properties of InGaN/GaN QW with the Same Well-Plus-Barrier Thickness

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