Improving the gain and efficiency of ultraviolet-C laser diodes

High-Power and High-Efficiency 221 nm AlGaN Far Ultraviolet Laser Diodes

“…As the requirements of UV operating wavelength decrease, Al-rich AlGaN layers become increasingly important for device design and production. 6,7 The design and manufacture of devices requiring lower wavelengths of operation for UV sources need Al-rich AlGaN layers. 8,9 Unfortunately, achieving highly crystalline elements with effective doping presents a number of difficulties for Al-rich AlGaN layers.…”