Improving the efficiency of a CIGS solar cell to above 31% with Sb<sub>2</sub>S<sub>3</sub> as a new BSF: a numerical simulation approach by SCAPS-1D

Rahman, Md. Ferdous; Chowdhury, Mithun; Marasamy, Latha; Mohammed, Mustafa K. A.; Haque, Md. Dulal; Al Ahmed, Sheikh Rashel; Irfan, Ahmad; Chaudhry, Aijaz Rasool; Goumri-Said, Souraya

doi:10.1039/d3ra07893k

Cited by 10 publications

(3 citation statements)

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“…This work studies the importance of Cd-free silicon as a SnS 2 buffer layer substitute for CISe 2 solar cells. Table , Table , − Table , , and Table show the input properties used for the simulation, and Figure shows Al–Ni/ZnO/SnS 2 /CuInSe 2 /Mo solar cell structure. Numerical analysis of the SCAPS software evaluates the convenience of the SnS 2 layer as a buffer layer.…”

Section: Resultsmentioning

confidence: 99%

Relative Simulation Analysis of Cadmium Sulfide (CdS) and Tin Sulfide (SnS₂) As a Buffer Layer in CuInSe₂-Based Thin Film Solar Cell

Sakunde,

Chaure,

Jadkar

et al. 2024

ACS Appl. Energy Mater.

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Chalcopyrite I−III−VI2-based solar cells include CuInSe 2 material, which is one of the inordinate chalcopyrites. Observation of the relationship between the input variable parameters and output parameters for the CISe 2 -based solar cell is studied by SCAPS-1D software. This study covers a Mo/CISe 2 /CdS/ZnO/Al−Ni solar cell with the Al−Ni composite layer as a front metal contact. Mo/CISe 2 /SnS 2 / ZnO/Al−Ni heterojunction solar cell was used in the next simulation. SnS 2 material was used instead of the CdS layer because of its properties like environmental friendly element, flexible bandgap, nontoxicity, and large natural abundance. The shallow uniform density parameter is simulated or optimized for the absorber layer (CuInSe 2 ) and the ZnO layer. The shallow uniform donor density and the thickness were optimized for the SnS 2 layer. Also, a comparative optical study was performed for both the CdS layer and the SnS 2 layer in the CISe 2 solar cell. In this paper, the CISe 2 solar cell with a CdS layer obtained a fill factor (FF) of 84.85%, an optimal photoelectric conversion efficiency (Eff) of 20.60%, an open circuit voltage (V oc ) of 0.78 V, and a short circuit current density (J sc ) of 30.98 mA/ cm 2 , and that with an SnS 2 layer obtained a fill factor (FF) of 85.22%, efficiency (Eff) of 20.84%, open circuit voltage (V oc ) of 0.78 V, and short circuit current density (J sc ) of 31.19 mA/cm 2 . The outcomes obtained by these numerical calculations are helpful in the development of high-efficiency solar cells.

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Section: Resultsmentioning

confidence: 99%

Relative Simulation Analysis of Cadmium Sulfide (CdS) and Tin Sulfide (SnS₂) As a Buffer Layer in CuInSe₂-Based Thin Film Solar Cell

Sakunde,

Chaure,

Jadkar

et al. 2024

ACS Appl. Energy Mater.

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“…Organometallic perovskite solar cells (PSCs) have garnered considerable attention as a very promising and cost-effective photovoltaic technology, primarily because of their competitive performance when compared to silicon solar cells. − Nowadays, n-i-p PCSs have achieved a power conversion efficiency (PCE) of 26.1%. − Perovskite-based photovoltaics are categorized into many classes according to their cell structure, such as typical, planar, mesoscopic, and inverted, as well as the position of their charge-transporting layers. − Thus far, the planar structure has shown the highest verified efficiency. Hence, scientists are generally interested in both conventional (n-i-p) and inverted (p-i-n) planar PSC layouts. − Out of all of the electron transport layers (ETLs), compact and mesoporous titanium dioxide (TiO 2 ) ETLs have demonstrated high efficiency. − Nevertheless, the TiO 2 layer continues to have issues with defect trap levels and low electron mobility, which impede electron transportation and, thus, influence the charge collection capacity …”

Section: Introductionmentioning

confidence: 99%

Efficient Perovskite Photovoltaics by a Nanostructured Ga₂O₃ Hole-Blocking Layer

Mohammed

2024

Energy Fuels

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This research uses the SCAPS-1D simulation program to methodically enhance and numerically analyze perovskite solar cells that utilize a gallium oxide (Ga 2 O 3 ) holeblocking layer. To corroborate our calculations, we initially compared the current density−voltage properties (J−V) obtained from our SCAPS model to experimental results. Remarkably, the curve exhibited almost excellent alignment, exhibiting the precision and reliability of our analytical approach. We simulated a typical (n-i-p) architecture and carefully investigated the performance of various parameters for the electron transport layer and perovskite. We optimized the thicknesses of the perovskite and Ga 2 O 3 , doping concentration of Ga 2 O 3 , perovskite defect density, interfacetrapped defects, series resistance, and shunt resistance. Through calculation, we successfully developed an efficient perovskite photovoltaic with the structure of FTO/Ga 2 O 3 /MAPbI 3 /spiro-OMeTAD/Au, yielding a champion performance of 28.19%. This modeling is beneficial for understanding the operational principles of MAPbI 3 photovoltaics. It also plays a crucial role in directing the fabrication of high-performance devices under laboratory conditions.

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“…Known for its thin-film technology and impressive light-absorbing properties, CIGS exhibits a conversion efficiency of up to 23% in standalone flexible configurations [27]. A theoretical study has shown that a CIGS cell structure with Sb 2 S 3 as a back surface field region can achieve a PCE higher than 31% [28]. Other numerous simulation studies on CIGS solar cells explored the effects of defect states, bandgap grading, and various other factors [29][30][31].…”

Section: Introductionmentioning

confidence: 99%

Comprehensive design and analysis of thin film Sb₂S₃/CIGS tandem solar cell: TCAD simulation approach

Salem,

Shaker,

Aledaily

et al. 2024

Phys. Scr.

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This research presents a design and analysis of a tandem solar cell, combining thin film wide bandgap Sb2S3 (1.72 eV) and narrow bandgap CIGS (1.15 eV) for the top and bottom sub-cells, respectively. The integration of all thin film layers enhances flexibility, rendering the tandem solar cell suitable for applications such as wearable electronics. To optimize the power conversion efficiency (PCE) of the tandem solar device, advanced technology computer-aided design (TCAD) simulation tools are employed to estimate loss mechanisms and fine-tune parameters for each layer. An experimentally validated optoelectronic model is introduced, calibrated and validated against fabricated reference solar cells for the individual top and bottom cells. The calibrated model is then utilized to propose optimization routines for the Sb2S3/CIGS tandem solar cell. The initial tandem cell exhibits a JSC of 15.72 mA/cm2 and a PCE of 15.36%. The efficiency drop in the tandem configuration is identified primarily in the top cell. A systematic optimization process for the top cell is initiated, exploring various configurations, including HTL-free and ETL-free setups. Moreover, an np homojunction structure for the top cell is proposed. Optimization routines are applied that involve determining optimal thickness and doping concentration of the n-layer, investigating the effect of p-layer doping concentration, and exploring the influence of the work function of the front contact. As a result, the tandem cell efficiency is significantly improved to 23.33% at the current matching point (CMP), with a JSC of 17.15 mA/cm2. The findings contribute to the advancement of thin-film tandem solar cell technology, showcasing its potential for efficient and flexible photovoltaic applications.

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Improving the efficiency of a CIGS solar cell to above 31% with Sb₂S₃ as a new BSF: a numerical simulation approach by SCAPS-1D

Abstract: The remarkable performance of copper indium gallium selenide (CIGS)-based double heterojunction (DH) photovoltaic cells is presented in this work.

Cited by 10 publications

References 86 publications

Relative Simulation Analysis of Cadmium Sulfide (CdS) and Tin Sulfide (SnS₂) As a Buffer Layer in CuInSe₂-Based Thin Film Solar Cell

Relative Simulation Analysis of Cadmium Sulfide (CdS) and Tin Sulfide (SnS₂) As a Buffer Layer in CuInSe₂-Based Thin Film Solar Cell

Efficient Perovskite Photovoltaics by a Nanostructured Ga₂O₃ Hole-Blocking Layer

Comprehensive design and analysis of thin film Sb₂S₃/CIGS tandem solar cell: TCAD simulation approach

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Improving the efficiency of a CIGS solar cell to above 31% with Sb2S3 as a new BSF: a numerical simulation approach by SCAPS-1D

Abstract: The remarkable performance of copper indium gallium selenide (CIGS)-based double heterojunction (DH) photovoltaic cells is presented in this work.

Cited by 10 publications

References 86 publications

Relative Simulation Analysis of Cadmium Sulfide (CdS) and Tin Sulfide (SnS2) As a Buffer Layer in CuInSe2-Based Thin Film Solar Cell

Relative Simulation Analysis of Cadmium Sulfide (CdS) and Tin Sulfide (SnS2) As a Buffer Layer in CuInSe2-Based Thin Film Solar Cell

Efficient Perovskite Photovoltaics by a Nanostructured Ga2O3 Hole-Blocking Layer

Comprehensive design and analysis of thin film Sb2S3/CIGS tandem solar cell: TCAD simulation approach

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Improving the efficiency of a CIGS solar cell to above 31% with Sb₂S₃ as a new BSF: a numerical simulation approach by SCAPS-1D

Relative Simulation Analysis of Cadmium Sulfide (CdS) and Tin Sulfide (SnS₂) As a Buffer Layer in CuInSe₂-Based Thin Film Solar Cell

Relative Simulation Analysis of Cadmium Sulfide (CdS) and Tin Sulfide (SnS₂) As a Buffer Layer in CuInSe₂-Based Thin Film Solar Cell

Efficient Perovskite Photovoltaics by a Nanostructured Ga₂O₃ Hole-Blocking Layer

Comprehensive design and analysis of thin film Sb₂S₃/CIGS tandem solar cell: TCAD simulation approach