2013
DOI: 10.1021/ja401320n
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Improving the Charge Transport in Self-Assembled Monolayer Field-Effect Transistors: From Theory to Devices

Abstract: A three-pronged approach has been used to design rational improvements in self-assembled monolayer field-effect transistors: classical molecular dynamics (MD) simulations to investigate atomistic structure, large-scale quantum mechanical (QM) calculations for electronic properties, and device fabrication and characterization as the ultimate goal. The MD simulations reveal the effect of using two-component monolayers to achieve intact dielectric insulating layers and a well-defined semiconductor channel. The QM… Show more

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Cited by 70 publications
(91 citation statements)
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“…11 In agreement with experimental results, 12,13 the study revealed the crucial influence of the morphology of the SAM on the transport properties. In the present paper, we extend the previous study using a fully quantum mechanical description of transport.…”
Section: 7910supporting
confidence: 81%
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“…11 In agreement with experimental results, 12,13 the study revealed the crucial influence of the morphology of the SAM on the transport properties. In the present paper, we extend the previous study using a fully quantum mechanical description of transport.…”
Section: 7910supporting
confidence: 81%
“…16 Lithographically patterned gold (30 nm) is placed on top of the SAM, serving as source and drain electrodes. 11 The semiconducting C 60 head groups of the functionalized PA in the SAM form the active transistor channel in the device. In this paper, we focus on the modeling of charge transport within the SAM.…”
Section: A Setupmentioning
confidence: 99%
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“…SAMs of functionalized fullerenes have been used in organic photovoltaics, 13,21,22 memory transistors, 9 light sensors 23 and SAMFETs. 18,24,25 In all of these devices the order of the SAM is of crucial importance for electronic properties. Therefore, ways to access information about and actually control the morphology of these films can enhance the device performance.…”
Section: Introductionmentioning
confidence: 99%