Improving the Charge Injection in Organic Transistors by Covalently Linked Graphene Oxide/Metal Electrodes

Chen, Xiaosong; Zhang, Suna; Wu, Kunjie; Xu, Zeyang; Li, Hongwei; Meng, Yu; Ma, Xiaoqing; Liu, Liwei; Li, Liqiang

doi:10.1002/aelm.201500409

Cited by 26 publications

(32 citation statements)

References 86 publications

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“…The typical 5 µm BC transistor gives a mobility of 0.15 cm 2 V −1 s −1 , and the maximum mobility is about 0.33 cm 2 V −1 s −1 , while such value is already one order higher than the transistors without the inducing layer (0.01-0.05 cm 2 V −1 s −1 ), and are comparable to many BC pentacene transistors reported in the literatures. [19,31] A slight nonlinear phenomenon in the low V D observed from the output characteristics indicated the contact issue still existed. With channel length of 10 µm, the maximum mobility increases to 0.78 cm 2 Figure S1, Supporting Information), and the maximum mobility is one of the best among most of the reported BC transistors based on pentacene.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

High‐Performance Bottom‐Contact Organic Thin‐Film Transistors by Improving the Lateral Contact

Zhang

Wang

Zhou

et al. 2017

Adv Elect Materials

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prepatterned electrodes on the substrates generate artificial steps that significantly affect the morphological uniformity and continuity of the organic active layer at the electrode/organic interfaces, causing large contact resistance. The most common solution is to modify the electrodes, e.g., chemical bonding of thiols on gold, inserting buffer layer on the electrodes, or applying conductive materials such as graphene, polypyrrole as electrodes. [2,10, These approaches could either realize a good energy level alignment or improve the interface morphology to decrease the contact resistance. Nevertheless, the performances of the BC transistors are still insufficient to match the application requirements.It is known that the resistance of the transistors consists of channel resistance and contact resistance. The latter is determined by the carrier injection from the interfaces of the organic/electrode: the top injection and the side injection. [22] With regard to the side injection, a major issue is the morphology discontinuity near the edge of the electrodes. Previously, Kudo and co-workers proposed a method that embedding electrodes into the dielectric layer to achieve a planar interface and obtained a mobility ≈0.48 cm 2 V −1 s −1 (in saturate regime) for pentacene, but this will induce relatively complicate patterning process. [33][34][35] Li et al. treated the electrodes with fluorine substituted benzene thiol and effectively improved the texture from the contacts extending to thwe channel, as well as the performance of corresponding solution casted BC transistors. [30,36,37] Here, we report a simple method to improve the continuity of organic films at the lateral interfaces of electrode/organic through incorporating an organic inducing layer. Inserting an inducing layer has been widely applied in top contact transistors and received considerable attentions. [38][39][40] Herein, the organic layer which forms lamellar grains from the edge of the photolithographypatterned electrodes was deposited prior to depositing the active layer. The following organic semiconductor layer grown on the inducing layer formed lamellar films on the inducing layer, enabling a good contact between the electrodes and the organic semiconductor thin films. As a result, a remarkable decrement of the contact resistance is achieved. Together with the improved film ordering by weak epitaxy on the inducing layer in the channel area, we achieved high performance bottom contact thin film transistors with the maximum mobility exceeding 1 cm 2 V −1 s −1 for pentacene in ambient condition, which is comparable to the top contact ones.One of the main challenges to achieve high-performance bottom-contact transistors involves the organic/electrodes contacts. This study provides a simple approach to address the contact issue by incorporating an inducing layer prior to the organic semiconductor deposition. The molecules of the inducing layer nucleate into lamellar grains from the edge to the channel, resulting in a good morphological contact to th...

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Section: Wwwadvelectronicmatdementioning

confidence: 99%

High‐Performance Bottom‐Contact Organic Thin‐Film Transistors by Improving the Lateral Contact

Zhang

Wang

Zhou

et al. 2017

Adv Elect Materials

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“…[1] Hitherto various modifiers have been applied to gold surfaces including physisorbed polymers, [1b] barium salts, [2] chemisorbed graphene oxide, [3] and self-assembled monolayers (SAMs) of thiols. [1] Hitherto various modifiers have been applied to gold surfaces including physisorbed polymers, [1b] barium salts, [2] chemisorbed graphene oxide, [3] and self-assembled monolayers (SAMs) of thiols.…”

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confidence: 99%

“…Surface modification of metal electrodes,especially of gold owing to its inertness towards oxidation and corrosion, can optimize the charge injection at the metal-organic interface, which is remarkably important for the preparation of high performing organic field-effect transistors (OFETs). [1] Hitherto various modifiers have been applied to gold surfaces including physisorbed polymers, [1b] barium salts, [2] chemisorbed graphene oxide, [3] and self-assembled monolayers (SAMs) of thiols. [4] In particular,s ince the ground-breaking report of dithiol SAMs on gold substrates 30 years ago, [4d] thiols on Au have become the mostly used combination as aresult of their easy preparation, tunable properties throughout the chemical modification, and the molecular order they provide.H owever, thiol monolayers completely desorb in al ow temperature range between 100-150 8 8Ca nd even degraded within 1-2 weeks at room temperature in air.…”

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confidence: 99%

N‐Heterocyclic‐Carbene‐Treated Gold Surfaces in Pentacene Organic Field‐Effect Transistors: Improved Stability and Contact at the Interface

Freitag

Chepiga

et al. 2018

Angew Chem Int Ed

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N-Heterocyclic carbenes (NHCs), which react with the surface of Au electrodes, have been successfully applied in pentacene transistors. With the application of NHCs, the charge-carrier mobility of pentacene transistors increased by five times, while the contact resistance at the pentacene-Au interface was reduced by 85 %. Even after annealing the NHC-Au electrodes at 200 °C for 2 h before pentacene deposition, the charge-carrier mobility of the pentacene transistors did not decrease. The distinguished performance makes NHCs as excellent alternatives to thiols as metal modifiers for the application in organic field-effect transistors (OFETs).

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“…Inorganic oxides, such as silica and alumina, generally have excellent stability and low leakage even with ultrathin thickness, but they are usually prepared by physical vapor deposition (PVD) [18], chemical vapor deposition (CVD) [19], sol-gel [20] and atom layer deposition (ALD) [21], etc., which usually need high temperature, expensive equipment, and complex procedures. Therefore, from the standpoint of performance, preparation of ultrathin inorganic oxides layer through low cost and mild condition is highly meaningful for the construction of low voltage OTFT.Silica is one of the most extensively used inorganic dielectric oxides because of its high performance and mature processing [22][23][24][25]. However, the traditional processes are not compatible with modern organic electronics and large-scale production that generally requires low-cost and low temperature process.…”

mentioning

confidence: 99%

“…Silica is one of the most extensively used inorganic dielectric oxides because of its high performance and mature processing [22][23][24][25]. However, the traditional processes are not compatible with modern organic electronics and large-scale production that generally requires low-cost and low temperature process.…”

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confidence: 99%

Ultrathin silica film derived with ultraviolet irradiation of perhydropolysilazane for high performance and low voltage organic transistor and inverter

et al. 2018

Self Cite

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In recent years, organic electronic devices have become more and more popular, such as organic solar cell (OSC) [1][2][3][4], organic light emitting diode (OLED) [5][6][7] and organic thin film transistor (OTFT) [8][9][10][11] by virtue of their light weight, easy-processing and flexibility. As OTFT could be used as functional device or drive circuit to activate other devices [12,13], the development of OTFT becomes more urgent in practical applications. Low voltage operation as one of the major performances is very important to apply OTFT in low power consumption situations, especially in wearable and portable devices. As we all know, dielectric layer plays an important role to modulate the operation voltage of OTFT. Utilization of ultrathin dielectric film is an effective method to construct low voltage transistor. Therefore, new dielectric materials and novel processing methods for ultrathin dielectric films are two main ways to adjust the energy consumption performance of OTFT. Generally, most dielectric materials are composed of polymers or inorganic oxides [14,15]. For polymers, although the cheap and easy-process features make them popular in organic electronics [16,17], ultrathin polymer film has a risk of leakage. Inorganic oxides, such as silica and alumina, generally have excellent stability and low leakage even with ultrathin thickness, but they are usually prepared by physical vapor deposition (PVD) [18], chemical vapor deposition (CVD) [19], sol-gel [20] and atom layer deposition (ALD) [21], etc., which usually need high temperature, expensive equipment, and complex procedures. Therefore, from the standpoint of performance, preparation of ultrathin inorganic oxides layer through low cost and mild condition is highly meaningful for the construction of low voltage OTFT.Silica is one of the most extensively used inorganic dielectric oxides because of its high performance and mature processing [22][23][24][25]. However, the traditional processes are not compatible with modern organic electronics and large-scale production that generally requires low-cost and low temperature process. Recently, silica derived from solution precursor conversion method has drawn more and more attention. The most common solution precursor is perhydropolysilazane (PHPS) which possesses basic chemical structure of [-Si(H 2 )-NH-] and usually goes through the hydrolysis, condensation and oxidation reaction of active Si-N bond and Si-H bond to form silica [26][27][28][29][30][31][32]. In our previous work, the conversion is finished by thermal annealing of PHPS on a hot plate [33]. Despite lower power consumption method, it may be not completely compatible with organic electronics due to the thermal annealing procedure. Some polymer substrates with low glass transition temperature cannot endure the annealing temperature [34][35][36]. Therefore, we further exploit milder silica preparation method based on PHPS. In this letter, we introduce an ultraviolet irradiation conversion to fabricate ultrathin silica film and further appl...

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Improving the Charge Injection in Organic Transistors by Covalently Linked Graphene Oxide/Metal Electrodes

Cited by 26 publications

References 86 publications

High‐Performance Bottom‐Contact Organic Thin‐Film Transistors by Improving the Lateral Contact

High‐Performance Bottom‐Contact Organic Thin‐Film Transistors by Improving the Lateral Contact

N‐Heterocyclic‐Carbene‐Treated Gold Surfaces in Pentacene Organic Field‐Effect Transistors: Improved Stability and Contact at the Interface

Ultrathin silica film derived with ultraviolet irradiation of perhydropolysilazane for high performance and low voltage organic transistor and inverter

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