Improving the −3 dB bandwidth of medium power GaN-based LEDs through periodic micro via-holes for visible light communications

Zhou, Zheng; Yan, Bing; Teng, Dongdong; Liu, Lilin; Wang, Gang

doi:10.1016/j.optcom.2017.01.050

Cited by 8 publications

(3 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These results demonstrate that the monolithic III-nitride photonics chip as a transmitter has the capability to achieve high-speed transmission in optical communication in the green band. The 3 dB modulation bandwidth can be estimated by f = 2 π / R C …”

Section: Resultsmentioning

confidence: 99%

Integrated Sensing and Communication Chip Based on III-Nitride for Motion Detection

Han

Chen

et al. 2023

ACS Omega

View full text Add to dashboard Cite

Integrated Sensing and Communication (ISAC) involves incorporating wireless sensing capabilities into communication systems. The integration of ISAC affords improvements in the performance of the communication system, as well as the ability to perform high-precision motion detection, positioning, imaging, and other related functions. Therefore, it is highly valuable to develop an ISAC terminal device that has a high degree of integration and energy efficiency. Here, we propose an ISAC chip that utilizes the coexistence of luminescence and detection properties of III-nitride multiple quantum wells for motion detection and visible light communication. The ISAC chip includes both a transmitter and a receiver of visible light and is fabricated on a sapphire wafer with InGaN/GaN multiple quantum wells. A rotating mirror is used as the object for motion detection and modulates the light signal emitted by the transmitter in a reflected light path. The variation period of the photocurrent curve generated by the modulated light signal is consistent with the rotation period of the mirror. We also investigate the performance of this chip as a transmitter and transceiver terminal of visible light communication systems. The results of the study provide a promising approach for the integration of motion sensing and visible light communication.

show abstract

Section: Resultsmentioning

confidence: 99%

Integrated Sensing and Communication Chip Based on III-Nitride for Motion Detection

Han

Chen

et al. 2023

ACS Omega

View full text Add to dashboard Cite

show abstract

“…With the popularization of commercial light-emitting diode (LED) indoor lighting, it is promising to use visible light for communication by using LED switching on and off at a high speed that we human eyes cannot recognize. However, a common LED has a narrow modulation bandwidth [4,5] , which limits the bandwidth of the entire VLC system. Thus, improving the modulation bandwidth of light sources has become a crucial problem.…”

Section: Introductionmentioning

confidence: 99%

An investigation on the application solution of light emitting diodes for improving the working bandwidth in visible light communication

Li¹,

Tu²,

Cao³

et al. 2023

Third Optics Frontier Conference (OFS 2023)

View full text Add to dashboard Cite

Visible light communication (VLC) has attracted attention due to its promising future. However, the low bandwidth of the light source leads to the relatively low communication rate. In this work, a measurement platform mainly consisted of signal source and oscilloscope is established to measure the 3-dB modulation bandwidth of LED. Experiments are conducted to investigate the influences of the LED’s working current, distribution of LED array, and LED’s driving circuit on the working bandwidth of the VLC system. When the LED driving current increases from 22 mA to 32 mA, the corresponding 3-Db bandwidth of the blue LED is improved from 1.8 MHz to 2.3 MHz. Designing blue LED array with the controlled internal distance between the neighboring LEDs aimed at improving the overall working bandwidth of the commercial light sources. The 3-Db bandwidth of a single blue LED is 1.8 M under the working current of 20 mA. The 3- dB bandwidth of the 2×2 blue LED array in series is 2.9 M under the working current of 20 mA with the optimized internal distance of 10 mm. Under the same measurement conditions, the 3-Db bandwidth of 1×2 blue LEDs in parallel is improved from 1.8 M to 2.9 M after adding the as-designed LED driving circuit.

show abstract

“…15,[19][20][21] To overcome these problems, flip-chip technology is brought up as a practical approach to satisfy heat dissipation of LEDs. [22][23][24][25][26][27] The formation of p-type electrode with low specific contact resistance and high reflectance is especially crucial for the realization of highly efficient flip-chip LEDs (FCLEDs). 28 Silver (Ag) has been widely employed as reflective layer due to its high reflectance at arbitrary angles of incidence.…”

mentioning

confidence: 99%

Comparative Study of Highly Reflective ITO/DBR and Ni/Ag ohmic Contacts for GaN-Based Flip-Chip Light-Emitting Diodes

Liu

et al. 2018

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Heat removal and current spreading uniformity are important for the realization of highly efficient light-emitting diodes (LEDs).Here we have compared two types of GaN-based flip-chip LEDs (FCLEDs) with highly reflective indium-tin oxide (ITO)/distributed Bragg reflector (DBR) and Ni/Ag p-type ohmic contacts. The via-based n-type contact structure was implemented to increase the utilization ratio of active region area and improve current spreading over the entire LEDs. Compared with FCLED with Ni/Ag, the FCLED with ITO/DBR shows a 6.3% higher light output power (LOP) at low current density of 31 A/cm 2 (90 mA) due to higher reflectance of ITO/DBR ohmic contact. However, at high injection currents, the Ni/Ag ohmic contact in FCLED alleviates self-heating issue by means of its superior heat dissipation performance. We also found that the less area coverage between ITO and metallization layer have a negative influence on heat dissipation performance of FCLED with ITO/DBR. As a result, the maximum light output power (LOP) of the FCLED with Ni/Ag obtained at 292.8 A/cm 2 is 1.3 times larger than that of FCLED with ITO/DBR obtained at 196.3 A/cm 2 .

show abstract

Improving the −3 dB bandwidth of medium power GaN-based LEDs through periodic micro via-holes for visible light communications

Cited by 8 publications

References 25 publications

Integrated Sensing and Communication Chip Based on III-Nitride for Motion Detection

Integrated Sensing and Communication Chip Based on III-Nitride for Motion Detection

An investigation on the application solution of light emitting diodes for improving the working bandwidth in visible light communication

Comparative Study of Highly Reflective ITO/DBR and Ni/Ag ohmic Contacts for GaN-Based Flip-Chip Light-Emitting Diodes

Contact Info

Product

Resources

About