2022
DOI: 10.1016/j.jeurceramsoc.2022.08.003
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Improving specific stiffness of silicon carbide ceramics by adding boron carbide

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Cited by 7 publications
(1 citation statement)
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“…However, sintering SiC without sintering aids or high external pressure is difficult because of its strong covalent bond structure and low selfdiffusion coefficient [4]. To save energy in production, pressureless solid-state-sintered SiC using several sources of boron and carbon as the boron-carbon additive systems sintered at 1900℃ to 2050℃ have been reported [5,6]. The majority of boron can form solid solutions in the SiC grains, and carbon is used to remove silica (SiO2) layers on the SiC surfaces, the boron-carbon additive system has already been shown to be effective for enhancing densification progress [3,5,7].…”
Section: Introductionmentioning
confidence: 99%
“…However, sintering SiC without sintering aids or high external pressure is difficult because of its strong covalent bond structure and low selfdiffusion coefficient [4]. To save energy in production, pressureless solid-state-sintered SiC using several sources of boron and carbon as the boron-carbon additive systems sintered at 1900℃ to 2050℃ have been reported [5,6]. The majority of boron can form solid solutions in the SiC grains, and carbon is used to remove silica (SiO2) layers on the SiC surfaces, the boron-carbon additive system has already been shown to be effective for enhancing densification progress [3,5,7].…”
Section: Introductionmentioning
confidence: 99%