Improving resistive switching characteristics of polyimide-based volatile memory devices by introducing triphenylamine branched structures

Tian, Yantao; Song, Ying; Yao, Hongyan; Yu, Haixin; Tan, Haiwei; Song, Ningning; Shi, Kaixiang; Zhang, Bo; Zhu, Shiyang; Guan, Shaokang

doi:10.1016/j.dyepig.2018.11.036

Cited by 15 publications

(16 citation statements)

References 42 publications

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“…This result indicates the energy barrier between HOMO level of PIs and work function of Al electrode plays an important role in the hole trapping to fulfill a smooth transition from the OFF state to the ON state. [26,52,53] Therefore, PIs with 6FDA possessing deep-lying HOMO levels, exhibited higher V turn-on and I on /I off values, which manifest their decent data discriminability and memory stability. In contrast, the energy barrier between the LUMO level of PIs and work function of Al electrode was 1.93, 1.64, 1.96, and 1.70 eV for PI(OODA_6FDA), PI(OODA_BPDA), PI(SSDA_6FDA), and PI(SSDA_BPDA), respectively, and therefore the electron injecting/trapping in the memory device was possibly ruled out.…”

Section: Flexible Resistive Memory Devices Characterizationmentioning

confidence: 97%

Highly Thermal Stable Polyimides Applied in Flexible Resistive Memory

Gao

Chen

Lin

et al. 2021

Macro Materials & Eng

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Flexible memory devices are one of the most crucial elements in the wearable electronics. In this work, polyimides (PIs)-based flexible resistive memory devices with an excellent thermal and mechanical durability are demonstrated. Four kinds of functional PIs are derived from the heterocyclic diamines including 2,6-diaminodibenzo-p-dioxin (OODA) and 2,6-diaminothianthrene, and dianhydrides including 4,4′-(hexafluoroisopropylidene)diphthalic anhydride (6FDA) and 3,3′,4,4′-biphenyltetracarboxylic dianhydride. PI with diamine of OODA and dianhydride of 6FDA (PI(OODA_6FDA)) possesses outstanding thermal and mechanical properties with a high glass transition temperature of 352 °C, a low coefficient of thermal expansion of 28.1 ppm K −1 , and a high elongation at break of 10%. In addition, PI(OODA_6FDA)-based memory shows write-once-read-many behavior with a high on/off current ratio of 10 6 and a stable data retention, attributed to the donor-acceptor charge transfer between the polymer chains. The retained current levels at a low resistive state can be observed even with thermal treatment at 200 °C for 24 h or 1000 times cyclic bending at a bending radius of 5 mm. These results demonstrate the potential of heterocyclic PIs for flexible resistive memory.

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Section: Flexible Resistive Memory Devices Characterizationmentioning

confidence: 97%

Highly Thermal Stable Polyimides Applied in Flexible Resistive Memory

Gao

Chen

Lin

et al. 2021

Macro Materials & Eng

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“…GO can be dispersed in a variety of solvents, which permits compatible processes with a wide range of commercially available flexible substrates. With various technologies like spin coating [164][165][166], drop casting [167][168][169], dip coating [170][171][172], and inkjet printing [157,173,174], GO dielectric layers can be deposited onto flexible substrates like polyethylene terephthalate (PET), polyether sulfone (PES), and polyimide [175][176][177][178][179][180]. In addition, the thickness of a single atomic layer and the excellent dispersibility in various solvents result in GO having enhanced compatibility with different commercial substrates [181][182][183].…”

Section: Application Of Graphene-based Memristors In Flexible Electromentioning

confidence: 99%

Memristive Non-Volatile Memory Based on Graphene Materials

Shen

Zhao

et al. 2020

Micromachines

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Resistive random access memory (RRAM), which is considered as one of the most promising next-generation non-volatile memory (NVM) devices and a representative of memristor technologies, demonstrated great potential in acting as an artificial synapse in the industry of neuromorphic systems and artificial intelligence (AI), due its advantages such as fast operation speed, low power consumption, and high device density. Graphene and related materials (GRMs), especially graphene oxide (GO), acting as active materials for RRAM devices, are considered as a promising alternative to other materials including metal oxides and perovskite materials. Herein, an overview of GRM-based RRAM devices is provided, with discussion about the properties of GRMs, main operation mechanisms for resistive switching (RS) behavior, figure of merit (FoM) summary, and prospect extension of GRM-based RRAM devices. With excellent physical and chemical advantages like intrinsic Young’s modulus (1.0 TPa), good tensile strength (130 GPa), excellent carrier mobility (2.0 × 105 cm2∙V−1∙s−1), and high thermal (5000 Wm−1∙K−1) and superior electrical conductivity (1.0 × 106 S∙m−1), GRMs can act as electrodes and resistive switching media in RRAM devices. In addition, the GRM-based interface between electrode and dielectric can have an effect on atomic diffusion limitation in dielectric and surface effect suppression. Immense amounts of concrete research indicate that GRMs might play a significant role in promoting the large-scale commercialization possibility of RRAM devices.

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“…HBPIs usually exhibit good solubility, processability and rich structural flexibility on account of their three‐dimensional dendritic structure [25–27] . Moreover, the branched electron donor linked with more than three phthalimides electron acceptors which have more charge transfer channels, leading to efficient charge transfer [28–30] . However, the molecular weight of HBPIs is relatively low due to the limited concentration of monomer to avoid gel formation during the preparation.…”

Section: Introductionmentioning

confidence: 99%

Novel Hyperbranched Polyimides Bearing Bis(trifluoromethyl)‐triphenylamine Moiety: Preparation and Rewritable Nonvolatile Memory Behaviours

et al. 2021

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Two novel hyperbranched polyimides (HBPIs) bearing bis(trifluoromethyl)‐triphenylamine moiety were prepared by condensation polymerization of a triamine monomer, N,N‐bis[4‐amino‐2‐(trifluoromethyl)phenyl]‐1,4‐benzenediamine (ATPB), with oxydiphthalic dianhydride (ODPA) and hexafluoroisopropyl phthalic anhydride (6FDA). The trifluoromethyl group was introduced into HBPIs to improve the property of the memory device. The resulting hyperbranched polyimides exhibited high molecular weights (weight‐average molecular weights large to 7.51×104 with a polydispersity of 1.63), outstanding organic‐solubility and excellent thermal stability (5 % thermal weight‐loss temperature up to 518 °C). Memory devices based on these hyperbranched polyimides showed similar rewritable nonvolatile memory characteristics but with different threshold voltages. The switching voltage was found to have a dependence on the energy barrier between polymer active layer and electrodes. These devices displayed favorable stability in both OFF and ON states with retention time long to 104 s and ON/OFF current ratio as high as 106. The space charge‐limited conduction model and local filaments formation were responsible for the switching behaviors of these memory devices. The results indicate that these hyperbranched polyimides are promising candidates for polymer memory application.

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Improving resistive switching characteristics of polyimide-based volatile memory devices by introducing triphenylamine branched structures

Cited by 15 publications

References 42 publications

Highly Thermal Stable Polyimides Applied in Flexible Resistive Memory

Highly Thermal Stable Polyimides Applied in Flexible Resistive Memory

Memristive Non-Volatile Memory Based on Graphene Materials

Novel Hyperbranched Polyimides Bearing Bis(trifluoromethyl)‐triphenylamine Moiety: Preparation and Rewritable Nonvolatile Memory Behaviours

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