Improving Reliability of Copper Dual-Damascene Interconnects by Impurity Doping and Interface Strengthening

Tada, Munehiro; Abe, Mari; Furutake, N.; Ito, Fuminori; Tonegawa, Takashi; Sekine, Makoto; Hayashi, Y.

doi:10.1109/ted.2007.901265

Cited by 32 publications

(22 citation statements)

References 36 publications

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“…Many of the reported methods involve either doping the Cu lines with a few percent of select alloying elements, [376][377][378][379][380][381][382] or selectively forming an additional surface passivation layer material between the DB and Cu. [383][384][385][386][387][388][389][390][391][392][393] In most cases, these methods involve additional processing steps separate from the DB deposition process.…”

Section: Current Status Of Low-k Db/ccl/es Materials and R And Dmentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

131

115

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Over the past decade, the primary focus for improving the performance of nano-electronic metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) delays via utilizing insulating dielectrics with ever lower values of dielectric permittivity. The integration and implementation of such low dielectric constant (i.e. low-k) materials has been fraught with numerous challenges. For intermetal and interlayer (ILD) low-k dielectrics, these challenges have been largely associated to integration with metal interconnect fabrication processes and well documented and reviewed in the literature. Although equally important, less attention has been given to other low-k dielectrics utilized in metal interconnect structures that are commonly referred to as low-k dielectric barriers (DB), etch stops (ES), and/or Cu capping layers (CCL). These materials present numerous challenges as well for integration into metal interconnect fabrication processes. However, they also have more stringent integrated functionality requirements relative to low-k ILD materials that serve only a basic purpose of electrically isolating adjacent metal lines. In this article, we review the integration challenges and associated integrated functionality requirements for low-k DB/ES/CCL materials with a focus on the current status and future direction needed for these materials to facilitate both Moore's law (i.e. More Moore) and More than Moore scaling.

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Section: Current Status Of Low-k Db/ccl/es Materials and R And Dmentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

131

115

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“…We newly propose two techniques of (a) Cu-alloy active-electrode to enhance bridge's robustness, (b) anti-Cu diffusive inert-electrode to suppress Cu diffusion from the bridge. The Cu-alloy has been introduced to Cu interconnects to suppress the Cu migration [6,7]. Ru-alloy is recently recognized as a candidate of future barrier metals for Cu [8].…”

Section: Proposal Of New Active-and Inert-electrodesmentioning

confidence: 99%

Improved reliability and switching performance of atom switch by using ternary Cu-alloy and RuTa electrodes

Tada

Sakamoto

Banno

et al. 2012

2012 International Electron Devices Meeting

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For the first time, Cu(AlTi)-alloy active-electrode coupled with RuTa inert-electrode is proposed to improve the reliability of nonvolatile Cu atom switch. The remarkably high rupture temperature (T r >400 o C) of the nanometer-scale Cu bridge with the high thermal resistance (R th ) is realized by the Cu-alloy without increasing programming current. The anti-Cu diffusive, RuTa-alloy improves the retention of the ON-state at 150 o C and endurance to >10 4 cycles. The metallurgical prescription is a key to improve the reliability and switching performance of the conducting bridge.

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“…16 Furthermore, Cu interconnects based on a Cu-Al alloy seed layer have been shown to have improved electromigration (EM) and stress migration (SM) performances. 16,17 Al has a more negative standard free energy of oxidation than Cu, Si, and C. 18 Thus, Al is the strongest oxide former among these elements. To minimize the Gibbs free energy during annealing of a Cu-Al alloy on SiO 2 substrate, reduction of the oxide material occurs.…”

Section: Introductionmentioning

confidence: 99%

Self-forming Al oxide barrier for nanoscale Cu interconnects created by hybrid atomic layer deposition of Cu–Al alloy

Park

Han

Kang

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The authors synthesized a Cu–Al alloy by employing alternating atomic layer deposition (ALD) surface reactions using Cu and Al precursors, respectively. By alternating between these two ALD surface chemistries, the authors fabricated ALD Cu–Al alloy. Cu was deposited using bis(1-dimethylamino-2-methyl-2-butoxy) copper as a precursor and H2 plasma, while Al was deposited using trimethylaluminum as the precursor and H2 plasma. The Al atomic percent in the Cu–Al alloy films varied from 0 to 15.6 at. %. Transmission electron microscopy revealed that a uniform Al-based interlayer self-formed at the interface after annealing. To evaluate the barrier properties of the Al-based interlayer and adhesion between the Cu–Al alloy film and SiO2 dielectric, thermal stability and peel-off adhesion tests were performed, respectively. The Al-based interlayer showed similar thermal stability and adhesion to the reference Mn-based interlayer. Our results indicate that Cu–Al alloys formed by alternating ALD are suitable seed layer materials for Cu interconnects.

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Improving Reliability of Copper Dual-Damascene Interconnects by Impurity Doping and Interface Strengthening

Cited by 32 publications

References 36 publications

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Improved reliability and switching performance of atom switch by using ternary Cu-alloy and RuTa electrodes

Self-forming Al oxide barrier for nanoscale Cu interconnects created by hybrid atomic layer deposition of Cu–Al alloy

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