Improving Photoelectric Conversion with Broadband Perovskite Metasurface

Abstract

The miniaturization and integration of optoelectronic devices require progressive size reduction of active layers, resulting in less optical absorption and lower quantum efficiency. In this work, we demonstrate that introducing a metasurface made of hybrid organic−inorganic perovskite (HOIP) can significantly enhance broadband absorption and improve photonto-electron conversion, which roots from exciting Mie resonances together with suppressing optical transmission. On the basis of the HOIP metasurface, a broadband photodetector has been fabricated where photocurrent boosts more than 10 times in the frequency ranging from ultraviolet to visible. The device response time is less than 5.1 μs at wavelengths 380, 532, and 710 nm, and the relevant 3 dB bandwidth is over 0.26 MHz. Moreover, this photodetector has been applied as a signal receiver for transmitting 2D color images in broadband optical communication. These results accentuate the practical applications of HOIP metasurfaces in novel optoelectronic devices for broadband optical communication.

Micro/Nano Perovskite Materials for Advanced X-ray Detection and Imaging

“…47−49 Various fabrication methods have been employed to create these micro/nano perovskite arrays on bulk materials, including epitaxy growth, 50−52 template-assisted imprinting, 53 and focused ion beam assisted etching. 54 These methods have helped to realize excellent perovskite micro-/nanostructure devices successfully, releasing their potential for a variety of applications in optoelectronics and other fields. He et al grew a single-crystal MAPbI 3 film on a freshly cleaved mica substrate and fabricated perovskite arrays by etching a 200 nm thick MAPbI 3 film using focused ion beam milling with an etching depth of approximately 100 nm.…”

“…In this intricate process, the key determinants for the perovskite's final characteristics and performance include the carefully calibrated parameters of etching time, operating voltage, and current. 54 Li et al made a significant breakthrough by developing a hydration intermediate phase regulated epitaxy growth technique, which enabled the fabrication of highly oriented nano arrays on bulk perovskite MAPbI 3 SCs (Figure 2a). 51 The arrays exhibited a preference for growth along the (110) crystal plane, showcasing great potential for anticounterfeiting applications.…”

“…Over the past decade, perovskite micro-/nanostructure devices have made significant strides in their development. Micro/nano arrays have shown outstanding optoelectronic performance attributed to their confined and directional carrier transport, high crystalline quality, and low defect density. − Various fabrication methods have been employed to create these micro/nano perovskite arrays on bulk materials, including epitaxy growth, − template-assisted imprinting, and focused ion beam assisted etching . These methods have helped to realize excellent perovskite micro-/nanostructure devices successfully, releasing their potential for a variety of applications in optoelectronics and other fields.…”

2D Ruddlesden‐Popper Sn‐Based Perovskite Weak Light Detector for Image Transmission and Reflection Imaging

“…[7][8][9][10] Pb-based perovskites have the features of a large absorption coefficient, long exciton diffusion length, good defect tolerance, and low costs. [11][12][13][14][15] Many perovskites photodetectors with weak light detection capability have been explored. [16][17][18][19][20] For example, Wu et al reported a weak light detector based on MAPbI 3 nanowire and gained a large detectivity of 2.06 × 10 13 Jones, showing great potential in the field of reflection imaging.…”

Designing Ordered Organic Small-Molecule Domains for Ultraviolet Detection and Micrometer-Sized Flexible Imaging

“…Photodetectors based on ultraviolet (UV)-sensitive materials can detect UV light and convert it into electric signals that have widespread applications in optical communication, flame detection, and UV imaging. − Inorganic wide-bandgap semiconductors have occupied the UV detection market for many years but face the bottlenecks of low flexibility and a limited material family . Although a series of low-dimensional wide-bandgap semiconductors have been designed to address this issue, their large-scale growth remains a challenge, limiting their practical application in industry .…”