2021
DOI: 10.1016/j.surfcoat.2021.127162
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Improving phase stability, hardness, and oxidation resistance of reactively magnetron sputtered (Al,Cr,Nb,Ta,Ti)N thin films by Si-alloying

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Cited by 37 publications
(10 citation statements)
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“…However, these values are not very prominent compared with other related nitride films. The sputtering methods and parameters greatly influence the density, microstructure, and quality of thin films, which may result in different hardness and strength, such as the coating environments, target power, voltage bias, temperature of the substrate and different deposition mechanisms [ 35 , 36 , 37 , 38 , 39 , 40 ]. The existence of non-covalent bonds in our films positively contributes to the ductility but may reduce the hardness simultaneously.…”
Section: Resultsmentioning
confidence: 99%
“…However, these values are not very prominent compared with other related nitride films. The sputtering methods and parameters greatly influence the density, microstructure, and quality of thin films, which may result in different hardness and strength, such as the coating environments, target power, voltage bias, temperature of the substrate and different deposition mechanisms [ 35 , 36 , 37 , 38 , 39 , 40 ]. The existence of non-covalent bonds in our films positively contributes to the ductility but may reduce the hardness simultaneously.…”
Section: Resultsmentioning
confidence: 99%
“…One of the main reasons for the improved oxidation resistance is attributed to the Nb-containing SiO 2 -rich layer, which reduces the number of vacancies and slows down the diffusion of oxygen atoms. Kretschmer et al [57] investigated the oxidation resistance of (AlCrNbTaTi)N and Si-doped (AlCrNbTaTi)N thin films prepared by the MS method on Si and sapphire substrates. The (AlCrNbTaTi)N film had an FCC structure, and decomposition of the FCC structure only occurred when the annealing temperature reached 1000 • C. Decomposition temperature shifted to 1200 • C when 12.0 at.% of Si was introduced to the HEA film composition, which means that Si-doping can further improve the oxidation resistance of HEA films.…”
Section: Thermal Stability and Oxidation Resistancementioning
confidence: 99%
“…The good anti-oxidation performance of the films can be due to the protective α-Al 2 O 3 and α-SiO 2 layers. Kretschmer et al [17] studied also the oxidation behavior of (AlCrNbTaTi)N film in air as a function of Si concentration. The annealing was performed at 850 • C for 100 h. Without Si, the film showed an oxide thickness of 2700 nm, while those with Si had 280 nm (Figure 6).…”
Section: Oxidation At High Temperaturementioning
confidence: 99%
“…For example, TiAlN shows good oxidation resistance, but its resistance is well below than that of HEFs (AlCrNbSiYTi)N [16]. Kretschmer et al showed also the improved oxidation resistance of (AlCrNbTaTi)N at 850 • C for 100 h [17]. High-entropy nitrides and carbides form simple solid solutions exhibiting better mechanical properties due to the strong covalent bonds between the elements and the large strain mismatch.…”
Section: Introductionmentioning
confidence: 99%
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