2011 IEEE/ACM International Conference on Computer-Aided Design (ICCAD) 2011
DOI: 10.1109/iccad.2011.6105410
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Improving dual V<inf>t</inf> technology by simultaneous gate sizing and mechanical stress optimization

Abstract: Process-induced mechanical stress is used to enhance carrier mobility and drive current in contemporary CMOS technologies. Stressed cells have reduced delay but larger leakage consumption. Its efficient power/delay trading ratio makes mechanical stress an enticing alternative to other power optimization techniques. This paper proposes an effective urgentpath guided approach that improves dual Vt technique by incorporating gate sizing and mechanical stress simultaneously. The introduction of mechanical stress i… Show more

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