Improving detectivity of self-powered GaN ultraviolet photodetector by nickel nanoparticles

Teker, Kasif; Hocaoglu, Ahmet; Yildirim, Mustafa A.

doi:10.1007/s00340-020-07567-5

Appl. Phys. B

2021

DOI: 10.1007/s00340-020-07567-5

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Improving detectivity of self-powered GaN ultraviolet photodetector by nickel nanoparticles

Kasif Teker

Ahmet Hocaoglu

Mustafa A. Yildirim

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Cited by 3 publications

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“…Gallium nitride (GaN) film, as an excellent candidate for UV PDs, exhibits the advantages of a wide direct bandgap (3.4 eV), and excellent chemical and thermal stability. [10][11][12] The GaNbased UV PDs have been investigated by many groups; nevertheless the research on its self-powered photodetection is limited. [13][14][15][16] H 2 V 3 O 8 (HVO) is a kind of layered vanadium compound, which is composed of V 3 O 8 layers linked by hydrogen bonds.…”

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confidence: 99%

Integration of H₂V₃O₈ nanowires and a GaN thin film for self-powered UV photodetectors

Dou

Liang

et al. 2022

Chem. Commun.

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confidence: 99%

Integration of H₂V₃O₈ nanowires and a GaN thin film for self-powered UV photodetectors

Dou

Liang

et al. 2022

Chem. Commun.

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Self-powered action in metal-semiconductor-metal ultraviolet photodetectors based on AlGaN/GaN high electron mobility transistor structures on different substrates

Razeen,

Tang,

Yuan

et al. 2024

Optical Materials

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Enhanced ultrathin ultraviolet detector based on a diamond metasurface and aluminum reflector

Feng¹,

Liu²,

shi³

et al. 2023

Opt. Express

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Metasurface is a kind of sub-wavelength artificial electromagnetic structure, which can resonate with the electric field and magnetic field of the incident light, promote the interaction between light and matter, and has great application value and potential in the fields of sensing, imaging, and photoelectric detection. Most of the metasurface-enhanced ultraviolet detectors reported so far are metal metasurfaces, which have serious ohmic losses, and studies on the use of all-dielectric metasurface-enhanced ultraviolet detectors are rare. The multilayer structure of the diamond metasurface-gallium oxide active layer-silica insulating layer-aluminum reflective layer was theoretically designed and numerically simulated. In the case of gallium oxide thickness of 20 nm, the absorption rate of more than 95% at the working wavelength of 200-220 nm is realized, and the working wavelength can be adjusted by changing the structural parameters. The proposed structure has the characteristics of polarization insensitivity and incidence angle insensitivity. This work has great potential in the fields of ultraviolet detection, imaging, and communications.

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Improving detectivity of self-powered GaN ultraviolet photodetector by nickel nanoparticles

Cited by 3 publications

References 29 publications

Integration of H₂V₃O₈ nanowires and a GaN thin film for self-powered UV photodetectors

Integration of H₂V₃O₈ nanowires and a GaN thin film for self-powered UV photodetectors

Self-powered action in metal-semiconductor-metal ultraviolet photodetectors based on AlGaN/GaN high electron mobility transistor structures on different substrates

Enhanced ultrathin ultraviolet detector based on a diamond metasurface and aluminum reflector

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Improving detectivity of self-powered GaN ultraviolet photodetector by nickel nanoparticles

Cited by 3 publications

References 29 publications

Integration of H2V3O8 nanowires and a GaN thin film for self-powered UV photodetectors

Integration of H2V3O8 nanowires and a GaN thin film for self-powered UV photodetectors

Self-powered action in metal-semiconductor-metal ultraviolet photodetectors based on AlGaN/GaN high electron mobility transistor structures on different substrates

Enhanced ultrathin ultraviolet detector based on a diamond metasurface and aluminum reflector

Contact Info

Product

Resources

About

Integration of H₂V₃O₈ nanowires and a GaN thin film for self-powered UV photodetectors

Integration of H₂V₃O₈ nanowires and a GaN thin film for self-powered UV photodetectors