“…In addition to the oxide-based SATFETs, semiconducting nanowires could offer an additional degree of freedom in designing new functional devices through band gap alignment to the TMD channel materials ( Lin et al., 2001 ). Zhonglin Wang et al.…”
Section: Gate Length Scaling Of Transistorsmentioning
“…In addition to the oxide-based SATFETs, semiconducting nanowires could offer an additional degree of freedom in designing new functional devices through band gap alignment to the TMD channel materials ( Lin et al., 2001 ). Zhonglin Wang et al.…”
Section: Gate Length Scaling Of Transistorsmentioning
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