Improving carrier mobility in two-dimensional semiconductors with rippled materials

A polarization-sensitive photothermoelectric photodetector based on mixed-dimensional SWCNT–MoS2 heterostructures

“…† We can see that the peak position of the MoS 2 E 2g mode in hybrid lms exhibits a relatively large redshi ($4 cm −1 ) compared with the pure MoS 2 monolayer, which can be ascribed to the in-plane tensile strain induced during the process. 22 Meanwhile, the strain-caused lattice distortion would widen the band gap of the MoS 2 monolayer, 23 resulting in the redshi of the PL peak by 16 meV. Attributed to the electron transfer from MoS 2 to SWCNTs as discussed above, 24 the A 1g peak of MoS 2 redshis by 0.8 cm −1 , and the G mode of SWCNTs also blueshis by 1 cm −1 .…”

Emerging Nonplanar van der Waals Nanoarchitectures from 2D Allotropes for Optoelectronics

“…Recently, a vdW nanoripple with lattice distortion has been obtained by using a substrate with surface fluctuations, [ 19 ] where the bulge density and height of the bulge are tunable ( Figure a). The enhanced electrical polarization increases the dielectric constant, and the electron–phonon scattering process is inhibited.…”

Ultrahigh anisotropic carrier mobility in ZnSb monolayers functionalized with halogen atoms

“…As demonstrated in MoS 2 , the introduction of ripples could lead to reduced electron-phonon scattering and therefore, enhanced room temperature mobility reaching 900 cm 2 V −1 s −1 , much larger than the mobility of 200-410 cm 2 V −1 s −1 predicted in at MoS 2 . 52 It is noted that the ultrahigh carrier mobility predicted herein is based on the simplied approach taking into account acoustic phonon scattering at room temperature. At considerably high temperature and large carrier densities, other limiting factors such as optical phonon scattering and electron-electron scattering would become more important.…”