Improvements in on-wafer load pull measurements

Abstract

This paper describes new results in the field of On-Wafer Load Pull measurements. While the applied system may be of any (vectorized) kind, the focus of this work is on the post processing of the data. New results of measurement interactions are shown and a procedure for simultaneously achieving accurate resuits forthe contours of PAE, gain, output power and other parameters is given. Measurements and results of this kind can come from stable as well as from ,,unstable" impedance regions. A discussion on measurements of Power Added Efficiency (PAE) is conducted. The comprehensive characterisation of a deviccircuk takes about one day. Gain and output power contours, achieved from HEMT measurements, are shown for 9 GHz.

Waveform Measurements - The Load-Pull Aspect

“…In the last years, manifold variations of fundamental and harmonic load-pull measurement setups with passive or active tuners have been discussed in the literature [1][2][3][4][5][6][7][8][9][10]. Recently, a few researchers started to investigate the combination of time-domain and load-pull measurements [11][12][13][14].…”