Improvement on the characteristic of Ba2Ti9O20 microwave dielectric materials prepared by modified co-precipitation method

Influence of V2O5 additions to 0.8(Mg0.95Zn0.05)TiO3–0.2Ca0.61Nd0.26TiO3 ceramics on sintering behavior and microwave dielectric properties

“…The microwave dielectric loss is mainly caused, not only by the lattice vibrational modes, but also by the pores, second phases, impurities, and lattice defects. Relative density also plays an important role in controlling the dielectric loss [24], as has been shown for other microwave dielectric materials. Instead of being due to the density, the decrease in Q × f value was due to the formation of a second phase of MgTi 2 O 5 as well as an increase in V 2 O 5 content.…”

Preparation of TiO2-rich Ba-Ti-O thick films by laser chemical vapor deposition method

“…BaTi 2 O 5 (BT 2 ), a new lead-free ferroelectric, has potential high-temperature application due to high Curie temperature (T C = 750 K) [4]. Ba 6 (BT 5 ) compounds can be applied to the microwave dielectric devices [5][6][7][8][9][10]. Laser chemical vapor deposition (LCVD) is considered to be a promising process to prepare high-quality films at high deposition rate (R dep ) with controllability of microstructure and orientation [11][12][13].…”

Microwave dielectric properties of Ba2Ti9O20 materials prepared by reaction sintering process

“…Co-precipitation process, which mixed the cations in atomic scale and synthesized the powders in obviously low temperature, can produce multiple-metallic-oxides with better homogeneity and higher activity. [9][10][11][12][13][14] However, the disadvantage in this process in the difficulty in stoichiometry control, as the co-precipitation process in sensitive to the pH- * Corresponding author. value and temperature of the solution.…”