Improvement of β-SiC Synthesis Technology on Silicon Substrate

Suchikova, Yana; Kovachov, Sergii; Bohdanov, Ihor; Kozlovskiy, Artem L.; Zdorovets, Maxim V.; Popov, Anatoli I.

doi:10.3390/technologies11060152

Cited by 2 publications

(2 citation statements)

References 75 publications

(74 reference statements)

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“…Additionally, there are techniques such as patterning the growth on undulant silicon using diamond slurry [12], growing 3C-SiC on fine-structured nm-scale hexagonal pillars [13] and trapping defects within inverted Si pyramids [14]. The growth of 3C-SiC on porous Si has also been explored to improve adhesion and reduce lattice mismatch between the thin film and substrate [15]. The use of compliant substrates such as these offers a reduction in defects and also the potential to suppress wafer bow; however, several of these methods rely on precise fabrication techniques that are dependent on the substrate's crystal orientation.…”

Section: Introductionmentioning

confidence: 99%

Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate

Colston,

Turner,

Renz

et al. 2024

Materials

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We demonstrate the growth of 3C-SiC with reduced planar defects on a micro-scale compliant substrate. Heteroepitaxial growth of 3C-SiC on trenches with a width and separation of 2 µm, etched into a Si(001) substrate, is found to suppress defect propagation through the epilayer. Stacking faults and other planar defects are channeled away from the center of the patterned structures, which are rounded through the use of H2 annealing at 1100 °C. Void formation between the columns of 3C-SiC growth acts as a termination point for defects, and coalescence of these columns into a continuous epilayer is promoted through the addition of HCl in the growth phase. The process of fabricating these compliant substrates utilizes standard processing techniques found within the semiconductor industry and is independent of the substrate orientation and offcut.

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Section: Introductionmentioning

confidence: 99%

Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate

Colston,

Turner,

Renz

et al. 2024

Materials

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“…Solar photovoltaic technology has developed rapidly in the last ten years due to its environmental friendliness and sustainability [1][2][3][4][5][6][7][8]. As global energy demand increases, the conversion of solar energy into electrical energy emerges as an alternative.…”

Section: Introductionmentioning

confidence: 99%

Hydrophobic and Transparent Tantalum Pentoxide-Based Coatings for Photovoltaic (PV) Solar Panels

Mocioiu,

Atkinson,

Aricov

et al. 2024

Coatings

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Photovoltaic (PV) solar panels suffer from efficiency losses due to the accumulation of dust on their surface during operation, as well as the loss of transparency in the top glass. The efficiency can be increased when hydrophobic films are deposited on the top glass of the solar cells. The top glass of solar cells must have three characteristics: high transmittance in the 380–750 nm range, a band gap greater than 3.2 eV and a refractive index higher than 1.23. So, the films require the same characteristics. This work presents an increase in the contact angle (related to an increase in the hydrophobic character) when Ta2O5 is partially substituted with ZnO. The studied films, physically deposited on glass by e-gun technology, present a non-crystalline state in the form of the X-ray patterns shown. The films have a transmission of 75%–80% in the visible range. The morphology and roughness of the coatings were evaluated by atomic force microscopy. All films show the values of the Millipore water contact angle higher than 91 degrees, leading to the acquisition of hydrophobic properties on the surface. In comparison, the substrate is hydrophilic, with an average contact angle of 53.81 ± 2.16. The hydrophobic properties and self-cleaning ability make the films recommendable for application. The band gap of the coatings was calculated with the Tauc method, and they have values of 4.5–4.6 eV.

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Improvement of β-SiC Synthesis Technology on Silicon Substrate

Cited by 2 publications

References 75 publications

Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate

Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate

Hydrophobic and Transparent Tantalum Pentoxide-Based Coatings for Photovoltaic (PV) Solar Panels

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