2007
DOI: 10.2109/jcersj.115.85
|View full text |Cite
|
Sign up to set email alerts
|

Improvement of Vacuum-Ultraviolet Transparency of Silica Glass by Modification of Point Defects(Review)

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
19
0

Year Published

2007
2007
2024
2024

Publication Types

Select...
8
1

Relationship

2
7

Authors

Journals

citations
Cited by 24 publications
(19 citation statements)
references
References 97 publications
(16 reference statements)
0
19
0
Order By: Relevance
“…The location of the absorption edge depends on the glass composition, impurity level, and point defects formed during the manufacturing process 17,33 as well as on temperature.…”
Section: 34mentioning
confidence: 99%
“…The location of the absorption edge depends on the glass composition, impurity level, and point defects formed during the manufacturing process 17,33 as well as on temperature.…”
Section: 34mentioning
confidence: 99%
“…As a consequence, a strong research effort is currently devoted to further improve the optical properties of this material in view of prospective vacuum UV (VUV, λ < 200 nm) applications. [1][2][3][4][5] Moreover, a-SiO 2 is an important model system to investigate the physical properties of glassy solids; this study is often aided by a comparison with α-quartz (c-SiO 2 ), the most common crystalline polymorph of silicon dioxide. Some of the basic open problems in the physics of glassy SiO 2 concern the fundamental absorption edge arising from the electronic transition from the valence to the conduction band.…”
Section: Introductionmentioning
confidence: 99%
“…Attempts have been made to study the photo-induced defects not only for silica glass [2,4,6] but also for phosphate and fluorophosphate glasses which are used as optical elements in the ultraviolet region [7][8][9][10]. Consequently, defect formation has been studied by optical spectroscopy, a method which is also useful in assessing the generation rates of defects during the irradiation process.…”
Section: Introductionmentioning
confidence: 99%