Improvement of turn‐off energy loss ( E _off ) variations by low Mg doping in p‐GaN gate power devices

Abstract

In p-GaN gate AlGaN/GaN power devices, turn-off energy loss (E off) variations in die-level uniformity are observed because of the thickness variations of remained p-GaN in the ungated region. These E off variations can be reduced by negative turn-off gate voltages. However, this method can induce new burden in circuit design because of the negative voltages. Therefore, we focus on fabrication processes such as Mg doping in p-GaN gate. Using low Mg doping in p-GaN gate, E off variations mostly disappear, but threshold voltage (V th) is approximately 0.3 V decreases. In addition, dynamic on-resistance (dynamic R ds,on) is slightly increased.

A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs

“…Various studies were carried out on GaN HEMTs from different perspectives. The different material compositions and manufacturing processes of GaN HEMT are studied in [10,11]. In [12,13], the calculations for GaN HEMT losses, including switching losses, parasitic capacitance losses, etc., are presented.…”