Improvement of transparent conductive properties of GZO/Cu/GZO tri-layer films by introducing H2 into sputtering atmosphere

Zhu, B.L.; Ma, Junjie; Lv, Ke; Wang, C.J.; Wu, Jun; Gan, Zhanghua; Liu, J.; Shi, Xinwei

doi:10.1016/j.spmi.2020.106456

Cited by 8 publications

(5 citation statements)

References 55 publications

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“…According to Haacke, the optical and electrical properties of transparent conductive oxide (TCO) films are best characterized via electrical sheet resistance and optical transmittance. Therefore, the FOM value was defined as an important parameter for evaluating the performance and determining the material quality of the films [ 45 , 46 , 47 , 48 ]. It is calculated using Equation (6) below.…”

Section: Resultsmentioning

confidence: 99%

Impact of Temperature Optimization of ITO Thin Film on Tandem Solar Cell Efficiency

Damgaci,

Kartal,

Gucluer

et al. 2024

Materials

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This study examined the impact of temperature optimization on indium tin oxide (ITO) films in monolithic HJT/perovskite tandem solar cells. ITO films were deposited using magnetron sputtering at temperatures ranging from room temperature (25 °C) to 250 °C. The sputtering target was ITO, with a mass ratio of In2O3 to SnO2 of 90% to 10%. The effects of temperature on the ITO film were analyzed using X-ray diffraction (XRD), spectroscopic ellipsometry, and sheet resistance measurements. Results showed that all ITO films exhibited a polycrystalline morphology, with diffraction peaks corresponding to planes (211), (222), (400), (440), and (622), indicating a cubic bixbyite crystal structure. The light transmittance exceeded 80%, and the sheet resistance was 75.1 Ω/sq for ITO deposited at 200 °C. The optical bandgap of deposited ITO films ranged between 3.90 eV and 3.93 eV. Structural and morphological characterization of the perovskite solar cell was performed using XRD and FE-SEM. Tandem solar cell performance was evaluated by analyzing current density-voltage characteristics under simulated sunlight. By optimizing the ITO deposition temperature, the tandem cell achieved a power conversion efficiency (PCE) of 16.74%, resulting in enhanced tandem cell efficiency.

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Section: Resultsmentioning

confidence: 99%

Impact of Temperature Optimization of ITO Thin Film on Tandem Solar Cell Efficiency

Damgaci,

Kartal,

Gucluer

et al. 2024

Materials

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“…[24] So the bandgap of ZTO thin film shall increase, which can be verified by the bandgap broadening of Ga-doped ZnO sputtering under H 2 containing atmosphere. [16] Based on the calculation by Li et al, the CBO at the CZTSSe/ZTO can reach the maximum value around 0.03 eV, when the bandgap of CZTSSe is 1.08 eV. [7] This model can be applied to CZTSe solar cells.…”

Section: Defect Modulation By Hydrogen-assisted Reactive Sputteringmentioning

confidence: 99%

“…[15] Furthermore, the modification of carriers density, resistivity, and bandgap for ZnO:Ga by introducing H 2 into sputtering atmosphere has been demonstrated. [16] Consequently, the incorporation of H 2 during sputtering process may also improve the properties of ZTO and thus the quality of heterojunction.…”

Section: Introductionmentioning

confidence: 99%

Optimization of Zn_1–xSn_xO Buffer Layer for Application in CZTSe Solar Cells with H₂‐Assisted Reactive Sputtering

Zhang

Guo

et al. 2021

Physica Status Solidi (a)

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CdS thin films are commonly used as buffer layer in Cu2ZnSnSe4 (CZTSe) solar cells inherited from CuInGaSe2 (CIGS) solar cells. However, in addition to the toxicity problems with Cd in conventional CdS buffer layers, the unfavorable band alignment at the CZTSe/CdS heterojunction confines the further improvement of CZTSe solar cells. ZnSnO (ZTO) is studied in this work as promising buffer layers for CZTSe solar cells. The stoichiometric composition and thickness of the ZTO layer are first optimized by sputtering. Subsequently, the improvement of the performance is demonstrated by sputtering ZTO in Ar gas mixed with H2. The effect of H2 on sputtering ZTO is investigated. The presence of O vacancies in ZTO buffer layer and its effect on carrier transport and device performance are presented. Through optimization, comparable VOC and higher fill factor (FF) are obtained for the CZTSe/ZTO solar cells compared with CZTSe/CdS reference.

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“…A 7 nm thick Cu layer sandwiched between Ga-doped ZnO films exhibited an average transmittance of >70% in the visible-light range. 23 To improve the transmittance, an anti-reflection (AR) layer of a dielectric material, such as AlN, 24 Al 2 O 3 , 25 SiO 2 , 26 SiON, 27 or SiN x , 28 was added on the metal layer.…”

Section: Introductionmentioning

confidence: 99%

“…fabricated a coating of aluminum-doped zinc oxide (AZO)/Ag/AZO(40/12/40 nm) with an optical transmittance of >80% in the region of 380–780 nm. A 7 nm thick Cu layer sandwiched between Ga-doped ZnO films exhibited an average transmittance of >70% in the visible-light range . To improve the transmittance, an anti-reflection (AR) layer of a dielectric material, such as AlN, Al 2 O 3 , SiO 2 , SiON, or SiN x , was added on the metal layer.…”

Section: Introductionmentioning

confidence: 99%

SiN_x/Cu Spectral Beam Splitting Films for Hybrid Photovoltaic and Concentrating Solar Thermal Systems

et al. 2021

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Spectral beam splitting (SBS) films are crucial for the development of hybrid systems based on photovoltaic (PV) and concentrating solar thermal (CST) technologies. In this study, a novel double-layer SiN x /Cu SBS film was prepared via magnetron sputtering. This film was developed based on the linear Fresnel solar thermal technology used in PV/CST hybrid systems. The as-deposited film exhibited superior SBS properties, with a high transmittance of 72.9% and a reflectance of 89.7%. To optimize the optical properties, the thicknesses of the metal and SiN x layers were precisely controlled. The optimal thicknesses of the Cu and SiN x layers were determined to be 17 and 67 nm, respectively. Furthermore, the thermal stability of the SBS film was evaluated. When annealed at 50 °C, the surface of the SBS film became more uniform and smooth, and with increasing annealing time, the film became denser. No strong diffraction peaks of Cu were observed in the X-ray diffraction patterns because of the low content and poor crystallization of Cu. Atomic force microscopy investigations revealed the formation of a textured surface and a decrease in the root-mean-square roughness with an increase in the annealing time from 0 to 360 h. As a key component with considerable application potential in PV/CST hybrid systems, SBS films are currently an important research topic.

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Improvement of transparent conductive properties of GZO/Cu/GZO tri-layer films by introducing H2 into sputtering atmosphere

Cited by 8 publications

References 55 publications

Impact of Temperature Optimization of ITO Thin Film on Tandem Solar Cell Efficiency

Impact of Temperature Optimization of ITO Thin Film on Tandem Solar Cell Efficiency

Optimization of Zn_1–xSn_xO Buffer Layer for Application in CZTSe Solar Cells with H₂‐Assisted Reactive Sputtering

SiN_x/Cu Spectral Beam Splitting Films for Hybrid Photovoltaic and Concentrating Solar Thermal Systems

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Improvement of transparent conductive properties of GZO/Cu/GZO tri-layer films by introducing H2 into sputtering atmosphere

Cited by 8 publications

References 55 publications

Impact of Temperature Optimization of ITO Thin Film on Tandem Solar Cell Efficiency

Impact of Temperature Optimization of ITO Thin Film on Tandem Solar Cell Efficiency

Optimization of Zn1–xSnxO Buffer Layer for Application in CZTSe Solar Cells with H2‐Assisted Reactive Sputtering

SiNx/Cu Spectral Beam Splitting Films for Hybrid Photovoltaic and Concentrating Solar Thermal Systems

Contact Info

Product

Resources

About

Optimization of Zn_1–xSn_xO Buffer Layer for Application in CZTSe Solar Cells with H₂‐Assisted Reactive Sputtering

SiN_x/Cu Spectral Beam Splitting Films for Hybrid Photovoltaic and Concentrating Solar Thermal Systems